Active pixel sensor with intra-pixel charge transfer

  • US 5,471,515 A
  • Filed: 01/28/1994
  • Issued: 11/28/1995
  • Est. Priority Date: 01/28/1994
  • Status: Expired due to Term
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First Claim
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1. An imaging device including a monolithic semiconductor integrated circuit substrate, said imaging device comprising a focal plane array of pixel cells, each one of said cells comprising:

  • a photogate overlying said substrate for accumulating photo-generated charge in an underlying portion of said substrate;

    a readout circuit comprising at least an output transistor formed in said substrate;

    a charge coupled device section formed on said substrate adjacent said photogate having a sensing node connected to said output transistor and at least one charge coupled device stage for transferring charge from said underlying portion of said substrate to said sensing node; and

    wherein said readout circuit is a complementary metal oxide semiconductor (CMOS) circuit formed on said substrate, said substrate being of a first conductivity type, said CMOS circuit comprising plural metal oxide field effect transistors of a first conductivity type, a well region of a second conductivity type in said substrate and plural metal oxide semiconductor transistors of a second conductivity type formed in said well region.

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