Static-random-access memory cell and an integrated circuit having a static-random-access memory cell

  • US 5,485,420 A
  • Filed: 07/21/1994
  • Issued: 01/16/1996
  • Est. Priority Date: 12/11/1992
  • Status: Expired due to Fees
First Claim
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1. A static-random-access memory cell comprising:

  • a first capacitor having a first plate and a second plate, wherein;

    the first plate of the first capacitor includes a first plate section of a gate electrode of a first transistor;

    the second plate of the first capacitor overlies the first plate of the first capacitor;

    the first and second plates of the first capacitor are substantially coincident with each other; and

    the first capacitor is located within the memory cell; and

    a first conductive member that is electrically connected to;

    the second plate of the first capacitor; and

    a first region of the memory cell, wherein the first region;

    lies within a substrate; and

    is selected from a group consisting of a source/drain region, a source region, and a drain region.

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