Power driver circuit

• US 5,504,449 A
• Filed: 04/09/1992
• Issued: 04/02/1996
• Est. Priority Date: 04/09/1992
• Status: Expired due to Term

• Current Assignee: Intersil Corporation (Renesas Electronics Corporation)
• Original Assignee: Harris Corporation (L3Harris Technologies, Inc.)
• Inventors: Prentice, John S.
• Primary Examiner(s): Callahan, Timothy P.
• Assistant Examiner(s): PHAN, TRONG Q
• Application Number:
  US07/865,868
• Time in Patent Office: 1,454 Days
• Field of Search: 307/270, 307/570, 307/571, 307/573, 307/574, 307/577, 307/630, 307/631, 307/632, 307/633, 307/246
• US Class Current: 327/427
• CPC Class Codes: H03K 17/04123 in field-effect transistor switches
• CPC Class Codes: H03K 17/04126 in bipolar transistor switches
• CPC Class Codes: H03K 17/6877 the control circuit comprising active elements different from those used in the output circuit
• CPC Class Codes: H03K 17/691 using transformer coupling

Abstract

A power driver circuit for turning a semiconductor switching device on and off in response to receipt of a control signal includes a trigger circuit that turns on a latching switch at a speed that is independent of the rate of change of the control signal. The trigger circuit is responsive to the control signal to apply a current from the semiconductor switching device to the latching switch. A high speed SCR may be used as the latching switch and may be triggered by a small trigger current from the gate of the semiconductor switching device fed to both the anode and cathode gates of the SCR. High speed diodes may also be used to increase the speed of the circuit. The power driver circuit improves the efficiency of the semiconductor switching device by decreasing the time the switching device spends in transition its two steady states.

Claims

1. A power driver circuit for a semiconductor switching device comprising:

an SCR that discharges a gate of the semiconductor switching device, the SCR having anode and cathode gates; and

trigger means operatively connected to said SCR for providing a trigger current to both said anode and cathode gates, thereby increasing the speed at which the SCR turns on, said trigger means comprising means for drawing said trigger current from the gate of the semiconductor switching device.

2. The circuit of claim 1 further comprising transistor means for providing the trigger current to said anode and cathode gates when the polarity of a control signal for controlling the switching device becomes negative.

3. The circuit of claim 2 wherein said transistor means is an PNP transistor.

4. The circuit of claim 1 wherein the semiconductor switching device is one of a MOSFET, IGBT, MCT, BJT, triac, SCR, GTO thyristor, and SIT.

12. The circuit of claim 1 wherein said SCR has a blocking voltage of 25 volts, the capacity to carry 10 amps and can become fully conductive in 10 nanoseconds or less.

5. A power driver circuit that is responsive to a transformer that reduces the power required to operate a semiconductor switching device at a specific frequency by decreasing the time required to transition the semiconductor switching device from on to off, the semiconductor switching device having a gate operated by the power driver circuit, the circuit comprising:

an SCR having an anode gate and a cathode gate, the SCR having the capacity to discharge a relatively large current at a gate of a semiconductor switching device to turn the semiconductor switching device off when the SCR is turned on;

means for drawing a relatively small trigger current from the gate of the semiconductor switching device when transformer voltage becomes negative; and

means for providing the trigger current to both of the anode and cathode gates to initiate conduction in the SCR, thereby increasing the speed at which the SCR turns on and decreasing the time the semiconductor switching device transitions from on to off.

6. The circuit of claim 5 wherein said SCR comprises:

a vertical PNP transistor connected in parallel to a lateral PNP transistor by their collectors, bases and emitters;

a vertical NPN transistor connected in parallel to a lateral NPN transistor by their collectors, bases and emitters;

said vertical PNP transistor having its collector and base connected respectively to said base and said collector of said lateral NPN transistor;

said lateral PNP transistor having its collector and base connected respectively to said base and said collector of said vertical NPN transistor; and

said lateral PNP transistor'"'"'s base being said anode gate and said lateral NPN transistor'"'"'s base being said cathode gate.

7. The circuit of claim 6 wherein said SCR further comprises first shunt means for limiting a charge stored in the bases of said lateral PNP transistor and said vertical PNP transistor, and second shunt means for limiting a charge stored in the bases of said lateral NPN transistor and said vertical NPN transistor.

8. The circuit of claim 7 wherein said first shunt means comprises a second lateral NPN transistor, and said second shunt means comprises a second lateral PNP transistor.

9. The circuit of claim 5 wherein said means for drawing a trigger current comprises a diode for preventing inadvertent turn on of said SCR.

10. The circuit of claim 9 wherein said diode comprises a PNP transistor and an NPN transistor where the base of each said transistor is connected to the emitter of the other said transistor, and the emitter of each said transistor is connected to the collector of the other said transistor, and wherein resistance means is provided in each of the emitter-collector connections.

11. The circuit of claim 5 wherein the semiconductor switching device is one of a MOSFET, IGBT, MCT, BJT, triac, SCR, GTO thyristor, and SIT.

13. A method of driving a semiconductor switching device comprising the steps of:

(a) providing an SCR with both an anode and cathode gate for discharging a gate of the semiconductor switching device to be driven; and

(b) providing a trigger current to both of the anode and cathode gates of the SCR by drawing a trigger current from the gate of the semiconductor switching device,

thereby increasing the speed at which the SCR turns on.

14. A method of reducing the power required to operate a semiconductor switching device at a specific frequency by decreasing the time required to transition the semiconductor switching device from on to off, where the semiconductor switching device has a gate operated by a power driver circuit in response to a transformer comprising the steps of:

(a) providing an SCR having an anode gate and a cathode gate for discharging a relatively large current at a gate of the semiconductor switching device to turn the semiconductor switching device off when the SCR is turned on;

(b) drawing a relatively small trigger current from the gate of the semiconductor switching device when the transformer voltage becomes negative; and

(c) providing the trigger current to both of the anode and cathode gates to initiate conduction in the SCR, thereby increasing the speed at which the SCR turns on and decreasing the time the semiconductor switching device transitions from on to off.