Word line loading compensating circuit of semiconductor memory device

• US 5,504,715 A
• Filed: 11/17/1994
• Issued: 04/02/1996
• Est. Priority Date: 11/17/1993
• Status: Expired due to Term

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: Choi, Jong-Hyun, Lee, Yeong-Taek
• Primary Examiner(s): Nelms, David C.
• Assistant Examiner(s): DINH, SON T
• Application Number:
  US08/343,949
• Time in Patent Office: 502 Days
• Field of Search: 365/230.06, 365/194, 365/189.11, 365/204
• US Class Current: 365/230.06
• CPC Class Codes: G11C 8/08 Word line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, for word lines

Abstract

A word line loading compensating circuit compensates a word line boosted voltage level changed in accordance with a word line loading. A word line boosting circuit outputs a word line boosted voltage boosted over a power supply voltage input from the exterior of a chip, so as to boost a voltage of the word line connected to the memory cell array. A row decoder is connected to the word line boosted voltage output from the word line boosting circuit and selects a memory cell from an array of memory cells in correspondence with a predetermined row address signal. A capacitor connected between the word line boosted voltage and the row decoder stores a charge from the word line boosted voltage. A variable connecting device connects the word line boosted voltage to the capacitor before the word line boosted voltage reaches a saturation level, and cuts off the word line boosted voltage from the capacitor after the word line boosted voltage reaches the saturation level. A delay device inputs the word line boosted voltage, delays the input word line boosted voltage during the arrival time of the saturation level, and generates a delay output signal which controls the variable connecting device. A discharging device is controlled by the delay output signal and discharges the charge stored in the capacitor to ground after the word line boosted voltage reaches the saturation level.

Claims

1. A semiconductor integrated circuit comprising:

a memory cell array having a plurality of memory cells;

a word line boosting circuit for outputting a word line boosted voltage boosted over a power supply voltage so as to boost a voltage of a word line connected to said memory cell array;

a row decoder connected to said word line boosted voltage output from said word line boosting circuit for selecting said memory cell array in correspondence with a predetermined row address signal;

a capacitor for storing a charge from said word line boosted voltage;

variable connecting means for connecting said word line boosted voltage to said capacitor before said word line boosted voltage reaches a saturation level, and for cutting off said word line boosted voltage from said capacitor after said word line boosted voltage reaches said saturation level;

delay means, having said word line boosted voltage input thereto, for delaying said word line boosted voltage during an arrival time of said saturation level, and for generating a delay output signal which controls said variable connecting means; and

discharging means, controlled by said delay output signal output from said delay means, for discharging said charge stored in said capacitor to ground after said word line boosted voltage reaches said saturation level.

2. The semiconductor memory device as claimed in claim 1, wherein:

said arrival time of said saturation level of said word line boosted voltage is approximately 10 nanoseconds to 20 nanoseconds.

3. The semiconductor memory device as claimed in claim 1, wherein said variable connecting means comprises:

gating means for receiving said delay output signal output from said delay means and a predetermined enable signal;

a pass transistor having a first terminal connected to an output of said gating means and having a gate connected to said power supply voltage; and

a pull-down transistor having a gate connected to a second terminal of said pass transistor, having a first terminal connected to said word line boosted voltage, and having a second terminal connected to said capacitor.

4. The semiconductor memory device as claimed in claim 1, wherein:

said discharging means includes a transistor having a gate connected to said delay output signal.

5. The semiconductor memory device as claimed in claim 1, wherein:

said delay means comprises a plurality of inverters.

6. A word line loading compensating circuit of a semiconductor integrated circuit which compensates a word line boosted voltage changed in accordance with a word line loading, said word line loading compensating circuit comprising:

a memory cell array having a plurality of memory cells;

a word line boosting circuit for outputting said word line boosted voltage boosted over a power supply voltage so as to boost a voltage of a word line connected to said memory cell array;

a row decoder connected to said word line boosted voltage output from said word line boosting circuit for selecting said memory cell array in correspondence with a predetermined row address signal;

a capacitor for storing a charge from said word line boosted voltage;

variable connecting means for connecting said word line boosted voltage to said capacitor before said word line boosted voltage reaches a saturation level, and for cutting off said word line boosted voltage from said capacitor after said word line boosted voltage reaches said saturation level;

delay means, having said word line boosted voltage input thereto, for delaying said word line boosted voltage during an arrival time of said saturation level, and for generating a delay output signal which controls said variable connecting means; and

discharging means, controlled by said delay output signal output from said delay means, for discharging said charge stored in said capacitor to ground after said word line boosted voltage reaches said saturation level.

7. The word line loading compensating circuit of a semiconductor memory device as claimed in claim 6, wherein:

said arrival time of said saturation level of said word line boosted voltage is approximately 10 nanoseconds to 20 nanoseconds.

8. The word line loading compensating circuit of a semiconductor memory device as claimed in claim 6, wherein said variable connecting means comprises:

NOR gating means for receiving said delay output signal output from said delay means and a predetermined enable signal;

an NMOS pass transistor having a first terminal connected to an output of said NOR gating means and having a gate connected to said power supply voltage; and

an NMOS pull-down transistor having a gate connected to a second terminal of said NMOS pass transistor, having a first terminal connected to said word line boosted voltage, and having a second terminal connected to said capacitor.

9. The word line loading compensating circuit of a semiconductor memory device as claimed in claim 6, wherein:

said discharging means includes an NMOS transistor having a gate connected to said delay output signal.

10. The word line loading compensating circuit of a semiconductor memory device as claimed in claim 6, wherein:

said delay means comprises a plurality of inverters.

11. A word line loading compensating circuit which compensates a word line boosted voltage changed in accordance with a word line loading, said word line loading compensating circuit comprising:

a capacitor, having a first terminal constantly at ground potential, for storing a charge from said word line boosted voltage; and

variable connecting means for connecting said word line boosted voltage to said capacitor before said word line boosted voltage reaches a saturation level, and for cutting off said word line boosted voltage from said capacitor after said word line boosted voltage reaches said saturation level.

14. The word line loading compensating circuit as claimed in claim 11, further comprising:

discharging means for discharging said charge stored in said capacitor to ground after said word line boosted voltage reaches said saturation level.

12. The word line loading compensating circuit which compensates a word line boosted voltage changed in accordance with a word line loading, said word line loading compensating circuit comprising:

a capacitor for storing a charge from said word line boosted voltage;

variable connecting means for connecting said word line boosted voltage to said capacitor before said word line boosted voltage reaches a saturation level, and for cutting off said word line boosted voltage from said capacitor after said word line boosted voltage reaches said saturation level; and

delay means, having said word line boosted voltage input thereto, for delaying said word line boosted voltage during an arrival time of said saturation level, and for generating a delay output signal which controls said variable connecting means.

13. The word line loading compensating circuit as claimed in claim 12, wherein said variable connecting means comprises:

gating means for receiving said delay output signal output from said delay means and a predetermined enable signal;

a pass transistor having a first terminal connected to an output of said gating means and having a gate connected to said power supply voltage; and

a pull-down transistor having a gate connected to a second terminal of said pass transistor, having a first terminal connected to said word line boosted voltage, and having a second terminal connected to said capacitor.

15. The word line loading compensating circuit as claimed in claim 12, further comprising:

discharging means for discharging said charge stored in said capacitor to ground after said word line boosted voltage reaches said saturation level.