Method for forming a light emitting diode for use as an efficient emitter or detector of light at a common wavelength

  • US 5,525,539 A
  • Filed: 03/29/1995
  • Issued: 06/11/1996
  • Est. Priority Date: 09/27/1994
  • Status: Expired due to Term
First Claim
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1. A method of fabricating a light emitting diode capable of alternately functioning as an efficient emitter and detector of light at a common wavelength, comprising the steps of:

  • bringing a GaAs substrate into contact with a growth solution of Ga, As, Si and Al at an initial growth temperature of at least 930 degrees Celsius,cooling said growth solution through a transition temperature to grow a graded bandgap semiconductive structure on said substrate as a single epitaxial layer with the composition Ga1-x Alx As, and with first and second semiconductive regions the form a p-n junction, andplacing electrical contacts on said first and second conductive regions,the value of x in said semiconductive structure decreasing monotonically from a value greater than approximately 0.08 at the semiconductive structure surface on the n side of said junction to a value less than approximately 0.08 at said junction and to a still lower non-zero value at the semiconductive structure surface on the p side of said junction.

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