Method and apparatus for cold wall chemical vapor deposition

• US 5,551,985 A
• Filed: 08/18/1995
• Issued: 09/03/1996
• Est. Priority Date: 08/18/1995
• Status: Expired

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Torrex Equipment Corp (Applied Materials Incorporated)
• Inventors: Cook, Robert C., Brors, Daniel L.
• Primary Examiner(s): Nguyen, Nam
• Assistant Examiner(s): LUND, JEFFRIE ROBERT
• Application Number:
  US08/517,045
• Time in Patent Office: 382 Days
• Field of Search: 118/715, 118/724, 118/725, 392/407, 392/411, 392/416, 392/418
• US Class Current: 118/725
• CPC Class Codes: C23C 16/455 characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
• CPC Class Codes: C23C 16/45589 Movable means, e.g. fans
• CPC Class Codes: C23C 16/481 by radiant heating of the substrate
• CPC Class Codes: C23C 16/52 Controlling or regulating the coating process C23C16/45557, C23C16/279 take precedence

Abstract

A CVD reactor includes a vacuum chamber having first and second thermal plates disposed therein and two independently-controlled multiple-zone heat sources disposed around the exterior thereof. The first heat source has three zones and the second heat source has two zones. A wafer to be processed is positioned below the first thermal plate and immediately above the second thermal plate, thereby being indirectly heated from above by the first heat source via the first thermal plate and indirectly heated from below by the first zone of the second heat source via the second thermal plate. A thermal ring plate which laterally surrounds the edge of the wafer absorbs heat energy emitted from the second zone of the second heat source and heats the outer edge of the wafer. First and second sensors embedded in the first thermal plate and the thermal ring plate, respectively, measure and provide the respective temperatures thereof to a computer which, in response thereto, adjusts power to the three zones of the first heat source and the two zones of the second heat source to maintain the first thermal plate and the thermal ring plate, respectively, at a constant temperature. In this manner, a uniform temperature is maintained across the wafer.

Claims

1. A CVD reactor comprising:

a chamber containing;

a first thermal plate,

a second thermal plate positioned below said first thermal plate, wherein a wafer is interposed between said first and second thermal plates and not in contact with first and second thermal plates; and

a thermal ring plate laterally surrounding an outer edge of said wafer;

a first heat source positioned above said first thermal plate, said first thermal plate absorbing heat energy emitted from said first heat source and heating said wafer;

a second heat source having first and second portions and positioned below said second thermal plate, said second thermal plate absorbing heat energy emitted from said first portion of second heat source and heating said wafer, said thermal ring plate absorbing heat energy emitted from said second portion of said second heat source and heating said outer edge of said wafer.

2. The device of claim 1 wherein said first and second thermal plates comprise graphite.

3. The device of claim 1 further comprising means for rotating said wafer.

4. The device of claim 3 wherein said first and second thermal plates have an emissivity of approximately 1.0.

5. The device of claim 1 wherein said first and second heat sources each comprise a plurality of tungsten halogen lamps.

6. The device of claim 1 further comprising:

a computer;

a first thermocouple embedded within said first thermal plate and coupled to said computer, said thermocouple measuring the temperature of said first thermal plate;

a second thermocouple embedded within said thermal ring plate and coupled to said computer, said second thermocouple measuring the temperature of said thermal ring plate;

wherein said computer adjusts the intensity of said first heat source in response to said temperature of said first thermal plate and adjusts the intensity of said first and second portions of said second heat source in response to said temperature of said thermal ring plate.

7. The device of claim 6 further comprising:

a second plurality of independently rotatable nozzles; and

a plurality of third gas lines, each of said third gas lines being connected to an associated one of said second nozzles, wherein said shaft includes a fourth gas line having a first end connected to each of said third gas lines and having a second end connected to a second gas fitting such that a second gas, different from said first mentioned gas, injected into said second gas fitting may be directed toward said wafer through one or more of said second nozzles.

8. The device of claim 1 further comprising a gas injector for injecting a reactant gas into said chamber, said gas injector comprising:

a top plate having a plurality of independently rotatable nozzles and a plurality of first gas lines, each of said gas lines being connected to an associated one of said nozzles; and

a shaft comprising a second gas line having a first end connected to each of said first gas lines and having a second end connected to a gas fitting, wherein said gas is injected into said gas fitting and is directed toward said wafer through one or more of said nozzles.

9. The device of claim 8 further comprising a plurality of controls, each of said controls being connected to an associated one of said first gas lines for controlling the velocity of gas flowing through each of said associated nozzles.