Visible-wavelength semiconductor lasers and arrays

• US 5,557,627 A
• Filed: 05/19/1995
• Issued: 09/17/1996
• Est. Priority Date: 05/19/1995
• Status: Expired due to Term

• Current Assignee: Sandia Corporation (Martin Marietta Corporation)
• Original Assignee: Sandia Corporation (Martin Marietta Corporation)
• Inventors: Crawford, Mary H., Schneider, Richard P. Jr.
• Primary Examiner(s): Davie, James W.
• Application Number:
  US08/444,462
• Time in Patent Office: 487 Days
• Field of Search: 372/45, 372/46, 372/96, 372/50, 257/191
• US Class Current: 372/50.12
• CPC Class Codes: B82Y 20/00 Nanooptics, e.g. quantum optics or photonic crystals
• CPC Class Codes: H01S 5/18358 containing spacer layers to adjust the phase of the light wave in the cavity
• CPC Class Codes: H01S 5/2004 Confining in the direction perpendicular to the layer structure
• CPC Class Codes: H01S 5/2009 by using electron barrier layers
• CPC Class Codes: H01S 5/305 characterised by the doping materials used in the laser structure
• CPC Class Codes: H01S 5/3054 p-doping
• CPC Class Codes: H01S 5/3211 characterised by special cladding layers, e.g. details on band-discontinuities
• CPC Class Codes: H01S 5/34326 with a well layer based on InGa(Al)P, e.g. red laser

Abstract

A visible semiconductor laser. The visible semiconductor laser includes an InAlGaP active region surrounded by one or more AlGaAs layers on each side, with carbon as the sole p-type dopant. Embodiments of the invention are provided as vertical-cavity surface-emitting lasers (VCSELs) and as edge-emitting lasers (EELs). One or more transition layers comprised of a substantially indium-free semiconductor alloy such as AlAsP, AlGaAsP, or the like may be provided between the InAlGaP active region and the AlGaAS DBR mirrors or confinement layers to improve carrier injection and device efficiency by reducing any band offsets. Visible VCSEL devices fabricated according to the invention with a one-wavelength-thick (1λ) optical cavity operate continuous-wave (cw) with lasing output powers up to 8 mW, and a peak power conversion efficiency of up to 11%.

Claims

1. A semiconductor laser for emitting light at a visible wavelength comprising:

(a) a compound semiconductor substrate;

(b) at least one first-grown AlGaAs semiconductor layer formed above the substrate and having a first conductivity type;

(c) an active region comprised of InAlGaP formed above the first-grown AlGaAs layer;

(d) at least one last-grown AlGaAs semiconductor layer formed above the active region and having a second conductivity type opposite the first conductivity type, one of the conductivity types being defined as p-type by carbon, and the other conductivity type being defined as n-type to form a semiconductor junction about the active region;

(e) electrodes above and below the semiconductor junction for electrically activating the laser.

2. The laser of claim 1 wherein the substrate is of the first conductivity type.

3. The laser of claim 1 wherein the n-type conductivity is defined by an impurity dopant selected from the group consisting of Si, Sn, Se, Te, and S.

4. The laser of claim 1 wherein the AlGaAs layers are defined by an Al_x Ga_1-x As semiconductor alloy composition with an aluminum composition, x, in the alloy defined by x≧

0.4.

5. The laser of claim 1 wherein the active region includes at least one quantum-well layer.

6. The laser of claim 5 wherein the quantum-well layer is a strained quantum-well layer.

7. The laser of claim 6 wherein each strained quantum-well layer is comprised of InGaP.

8. The laser of claim 1 wherein the active region includes at least two quantum-well layers, and further includes a substantially lattice-matched InAlGaP barrier layer between each pair of adjacent quantum-well layers.

9. The laser of claim 1 wherein various components of the active region comprise InAlGaP compounds as defined by In_y (Al_z Ga_1-z)_1-y P where 0≦

y≦

1 and 0≦

z≦

1.

10. The laser of claim 1 further including a current-blocking region.

11. A plurality of lasers according to claim 10 in the form of an array.

12. The laser of claim 1 further including at least one transition layer comprised of a substantially indium-free semiconductor alloy located adjacent to the active region.

13. The laser of claim 12 in which the substantially indium-free semiconductor alloy is selected from the group consisting of AlAsP and AlGaAsP.

14. The laser of claim 12 wherein each transition layer includes a portion thereof adjacent the active region that has a graded semiconductor alloy composition.

15. The laser of claim 1 in the form of a vertical-cavity surface-emitting laser (VCSEL) and having a first distributed Bragg reflector (DBR) mirror defined by a plurality of the first-grown AlGaAs semiconductor layers and a second distributed Bragg reflector (DBR) mirror defined by a plurality of the last-grown AlGaAs semiconductor layers, adjacent AlGaAs layers in each DBR mirror having different semiconductor alloy compositions.

16. The VCSEL of claim 15 wherein the active region has a thickness that is substantially equal to an integer multiple of one-half wavelength (λ

/2) of the emitted light.

17. The VCSEL of claim 15 having an optical cavity defined by the DBR mirrors with a thickness that is substantially equal to an integer multiple of one-half wavelength (λ

/2) of the emitted light.

18. The laser of claim 1 in the form of an edge-emitting laser (EEL) with the first- and last-grown AlGaAs layers being confinement layers.

19. A vertical-cavity surface-emitting laser for emitting light at a visible wavelength comprising:

(a) a compound semiconductor substrate;

(b) a first AlGaAs distributed Bragg reflector (DBR) mirror being of a first conductivity type formed above the substrate;

(c) an active region comprised of InAlGaP formed above the first DBR mirror;

(d) a second AlGaAs distributed Bragg reflector (DBR) mirror of the opposite conductivity type formed above the active region and being of a second conductivity type opposite the first conductivity type, one of the conductivity types being defined as p-type by carbon, and the other conductivity type being defined as n-type to form a semiconductor junction about the active region; and

(e) electrodes above and below the semiconductor junction for electrically activating the laser.

20. The laser of claim 19 wherein the substrate is of the first conductivity type.

21. The laser of claim 19 wherein the opposite conductivity type is n-type as defined by an impurity dopant selected from the group consisting of Si, Sn, Se, Te, and S.

22. The laser of claim 19 wherein the AlGaAs DBR mirrors are defined by a plurality of Al_x Ga_1-x As semiconductor layers with an aluminum composition, x, defined by x≧

0.4, and adjacent Al_x Ga_1-x As semiconductor layers having a different aluminum composition, x.

23. The laser of claim 19 wherein at least one of the DBR mirrors, defined by a plurality of alternating high-refractive-index and low-refractive-index semiconductor layers, includes a composition-graded region between each high-refractive-index and low-refractive-index semiconductor layer.

24. The laser of claim 23 wherein the high-refractive-index layers are comprised of Al_x Ga_1-x As, and the low-refractive-index layers are comprised of AlAs.

25. The laser of claim 24 wherein the aluminum composition, x, is defined by 0.4≦

x≦

1.

26. The laser of claim 19 wherein the active region includes at least one quantum-well layer.

27. The laser of claim 26 wherein each quantum-well layer is a strained quantum-well layer.

28. The laser of claim 27 wherein each strained quantum-well layer is comprised of InGaP.

29. The laser of claim 19 wherein the active region includes at least two quantum-well layers, and further includes a substantially lattice-matched InAlGaP barrier layer between each pair of adjacent quantum-well layers.

30. The laser of claim 19 wherein various components of the active region comprise InAlGaP compounds.

31. The laser of claim 30 wherein the composition of the InAlGaP compounds is defined as In_y (Al_z Ga_1-z)_1-y P where 0≦

y≦

1 and 0≦

z≦

1.

32. The laser of claim 19 further including a current-blocking region.

33. A plurality of lasers according to claim 32 in the form of an array.

34. The laser of claim 19 further including at least one transition layer comprised of a substantially indium-free semiconductor alloy located adjacent to the active region.

35. The laser of claim 34 wherein a total thickness of the transition layers is substantially equal to an integer multiple of one-half wavelength (λ

/2) of the emitted light.

36. The laser of claim 34 in which the substantially indium-free semiconductor alloy is selected from the group consisting of AlAsP and AlGaAsP.

37. The laser of claim 34 wherein each transition layer includes a portion thereof adjacent the active region that has a graded semiconductor alloy composition.

38. The laser of claim 19 wherein the thickness of the active region is substantially equal to an integer multiple of one-half wavelength (λ

/2) of the emitted light.

39. The laser of claim 19 having an optical cavity defined by the DBR mirrors with a thickness that is substantially equal to a multiple of one-half wavelength (λ

/2) of the emitted light.

40. The laser of claim 19 wherein the second DBR mirror comprises a lower portion formed of a plurality of alternating low-refractive-index and high-refractive-index semiconductor layers and an upper portion thereof formed of a plurality of alternating low-refractive-index and high-refractive-index dielectric layers.

41. An edge-emitting semiconductor laser for emitting light at a visible wavelength comprising:

(a) a compound semiconductor substrate;

(b) a first AlGaAs confinement layer formed above the substrate and having a first conductivity type;

(c) an active region comprised of InAlGaP formed above the first confinement layer;

(d) a second AlGaAs confinement layer formed above the active region and having a second conductivity type opposite the first conductivity type, one of the conductivity types being defined as p-type by carbon, and the other conductivity type being defined as n-type to form a semiconductor junction about the active region;

(e) electrodes above and below the semiconductor junction for electrically activating the laser.

42. The laser of claim 41 wherein the substrate is of the first conductivity type.

43. The laser of claim 41 wherein the n-type conductivity is defined by an impurity dopant selected from the group consisting of Si, Sn, Se, Te, and S.

44. The laser of claim 41 wherein the AlGaAs confinement layers are defined by an Al_x Ga_1-x As semiconductor alloy with an aluminum composition, x, in the alloy defined by x≧

0.4.

45. The laser of claim 41 wherein the active region includes at least one quantum-well layer.

46. The laser of claim 45 wherein each quantum-well layer is a strained quantum-well layer.

47. The laser of claim 46 wherein each strained quantum-well layer is comprised of InGaP.

48. The laser of claim 41 wherein the active region includes at least two quantum-well layers, and further includes a substantially lattice-matched InAlGaP barrier layer between each pair of adjacent quantum-well layers.

49. The laser of claim 41 wherein various components of the active region comprise InAlGaP compounds as defined by In_y (Al_z Ga_1-z)_1-y P where 0≦

y≦

1 and 0≦

z≦

1.

50. The laser of claim 41 further including a current-blocking region.

51. A plurality of lasers according to claim 50 in the form of an array.

52. The laser of claim 41 further including at least one transition layer comprised of a substantially indium-free semiconductor alloy located adjacent to the active region.

53. The laser of claim 52 in which the substantially indium-free semiconductor alloy is selected from the group consisting of AlAsP and AlGaAsP.

54. The laser of claim 52 wherein each transition layer includes a portion thereof adjacent the active region that has a graded semiconductor alloy composition.