Dynamic random access memory with a simple test arrangement

• US 5,559,739 A
• Filed: 09/28/1995
• Issued: 09/24/1996
• Est. Priority Date: 09/28/1995
• Status: Expired due to Fees

• Current Assignee: International Business Machines Corporation
• Original Assignee: International Business Machines Corporation
• Inventors: Wong, Hing, DeBrosse, John K., Kirihata, Toshiaki
• Primary Examiner(s): Nelms, David C.
• Assistant Examiner(s): PHAN, TRONG Q
• Application Number:
  US08/535,702
• Time in Patent Office: 362 Days
• Field of Search: 365/189.01, 365/189.02, 365/201, 365/202, 365/203, 365/210, 371/21.3
• US Class Current: 365/189.03
• CPC Class Codes: G11C 11/401 forming cells needing refreshing or charge regeneration, i.e. dynamic cells
• CPC Class Codes: G11C 11/4091 Sense or sense/refresh amplifiers, or associated sense circuitry, e.g. for coupled bit-line precharging, equalising or isolating
• CPC Class Codes: G11C 11/4094 Bit-line management or control circuits
• CPC Class Codes: G11C 29/50 Marginal testing, e.g. race, voltage or current testing

Abstract

A Dynamic Random Access Memory (DRAM) including an array of memory cells arranged in rows and columns, a word line in each row responsive to a row address and, a pair of complementary bit lines in each column. The DRAM also includes a sense amp in each column connected between a sense enable and the pair of complementary bit lines. The sense amp is a pair of cross coupled NFETs, with the sources of the NFETs connected to the sense amp enable. A bit line pre-charge is connected to each pair of complementary bit lines. The bit line pre-charge is connected between the complementary bit line pair and a reference voltage. A test control circuit selectively holds the sense amp disabled and the bit line pairs in a pre-charge state in response to a test control signal. An active sense amp load connected between the sense amp and a load enable latches data in the sense amp. The active sense amp load is a pair of cross coupled PFETs connected to the sense amp with the sources of the PFETs connected to the load enable. Optionally, each column may include a plurality of bit line pairs, each pair connected to a mux input. In this embodiment, the sense amp is connected between the mux'"'"'s output and the sense amp enable. Because the control circuit uses the equalization voltage to disable the sense amp, cell signal margin may be tested in a new way. Instead of varying the sense amp reference voltage, the voltage stored in the cells is varied. So, cell signal margin is tested by varying cell signal V_S. V_S may be selected to determine both a high and a low signal margin.

Claims

1. A Dynamic Random Access Memory (DRAM) including an array of memory cells arranged in rows and columns, a word line in each said row responsive to a row address, a pair of complementary bit lines in each said column, said DRAM further comprising:

a sense amp in each said column connected between a sense enable and said pair of complementary bit lines;

a bit line pre-charge connected to each pair of complementary bit lines, said bit line pre-charge being connected between said complementary bit line pair and a reference voltage; and

,

test control means for selectively holding said sense amp disabled and said bit line pairs in a pre-charge state responsive to a test control signal.

2. The DRAM of claim 1 wherein the sense amp is latched by an active sense amp load connected between the sense amp and a load enable.

3. The DRAM of claim 2 wherein the test control means includes means for selectively holding said active sense amp load disabled responsive to said test control signal.

4. The DRAM of claim 2 wherein when said test control signal is in a first state, the test control means disables said bit line pre-charge responsive to a first timing signal and enables said sense amp and said active sense load responsive to a second timing signal, said bit lines being held in said pre-charged state and said sense amp and said active sense amp load being held disabled when said test control signal is in a second state.

5. The DRAM of claim 4 wherein the load enable is delayed from said sense amp enable.

6. The DRAM of claim 5 wherein the sense amp is a pair of cross coupled NFETs, the sources of the NFETs connected to said sense amp enable.

7. The DRAM of claim 6 wherein the active sense amp load is a pair of cross coupled PFETs, the sources of the PFETs connected to said load enable.

8. The DRAM of claim 4 wherein the sense amp and the active sense amp load are disabled by holding sense amp enable and load enable at said reference voltage.

9. A Dynamic Random Access Memory (DRAM) including an array of memory cells arranged in rows and columns, a word line in each said row responsive to a row address, a pair of complementary bit lines in each said column, said DRAM further comprising:

a sense amp in each said column connected between a sense enable and said pair of complementary bit lines, said sense amp being a pair of cross coupled NFETs, the sources of the NFETs connected to said sense amp enable;

an active sense amp load connected between the sense amp and a load enable, said active sense amp load being a pair of cross coupled PFETs, the sources of the PFETs connected to said load enable;

a bit line pre-charge connected to each pair of complementary bit lines, said bit line pre-charge being connected between said complementary bit line pair and a reference voltage; and

,

test control means for selectively holding said sense amp and said active sense amp load disabled and said bit line pairs in a pre-charge state responsive to a test control signal.

10. The DRAM of claim 9 wherein when said test control signal is in a first state, the test control means disables said bit line pre-charge responsive to a first timing signal and enables said sense amp and said active sense load responsive to a second timing signal, said bit lines being held in said pre-charged state and said sense amp and said active sense amp load being held disabled when said test control signal is in a second state.

11. The DRAM of claim 10 wherein the load enable is delayed from said sense amp enable.

12. The DRAM of claim 9 wherein the sense amp and the active sense amp load are disabled by holding sense amp enable and load enable at said reference voltage.

13. The DRAM of claim 9 wherein each said column includes a plurality of bit line pairs, each pair of said plurality of bit line pairs connected to a mux input, said sense amp being connected between an output of said mux and said sense amp enable.

14. A Dynamic Random Access Memory (DRAM) including an array of memory cells arranged in rows and columns, a word line in each said row responsive to a row address, a plurality of pairs of complementary bit lines in each said column, said DRAM further comprising:

a mux in each said column, each of said plurality of bit line pairs connected to an input to said mux;

a sense amp in each said column connected between a sense enable and an output of said mux, said sense amp being a pair of cross coupled NFETs, the sources of the NFETs connected to said sense amp enable;

an active sense amp load connected between the sense amp and a load enable, said active sense amp load being a pair of cross coupled PFETs, the sources of the PFETs connected to said load enable;

a bit line pre-charge connected to each pair of complementary bit lines, said bit line pre-charge being connected between said complementary bit line pair and a reference voltage; and

,

test control means for disabling said bit line pre-charge responsive to a first timing signal and enabling said sense amp and said active sense load responsive to a second timing signal when said test control signal is in a first state, said bit lines being held in said pre-charged state and said sense amp and said active sense amp load being held disabled when said test control signal is in a second state.

15. The DRAM of claim 14 wherein the load enable is delayed from said sense amp enable.

16. The DRAM of claim 14 wherein the sense amp and the active sense amp load are disabled by holding sense amp enable and load enable at said reference voltage.