Article comprising a Si-based photodetector

• US 5,589,704 A
• Filed: 01/27/1995
• Issued: 12/31/1996
• Est. Priority Date: 01/27/1995
• Status: Expired due to Term

• Current Assignee: Avago Technologies General IP PTE Limited (Broadcom, Inc.)
• Original Assignee: Lucent Technologies, Inc. (Nokia Corporation)
• Inventors: Levine, Barry F.
• Primary Examiner(s): TRAN, MINH LOAN
• Application Number:
  US08/379,422
• Time in Patent Office: 704 Days
• Field of Search: 257/432, 257/436, 257/437, 257/443, 257/448, 257/458, 257/461, 257/464
• US Class Current: 257/436
• CPC Class Codes: H01L 31/02363 of the semiconductor body itself, e.g. textured active layers
• CPC Class Codes: Y02E 10/50 Photovoltaic [PV] energy

Abstract

Si-based photodetectors according to the invention can have high speed (e.g.,≧1 Gb/s) and high efficiency (e.g.,>20%). The detectors include a relatively thin (e.g.,<0.5α^-1, where α^-1 is the absorption length in Si of the relevant radiation) crystalline Si layer on a dielectric (typically SiO₂) layer, with appropriate contacts on the Si layer. Significantly, the surface of the Si layer is textured such that the radiation that is incident on the surface and transmitted into the Si layer has substantially random direction. The randomization of the propagation direction results in substantial trapping of the radiation in the Si layer, with attendant increased effective propagation length in the Si. Detectors according to the invention advantageously are integrated with the associated circuitry on a Si chip, typically forming an array of detectors.

Claims

1. An article comprising a Si-based photodetector comprising

a) a crystalline Si layer disposed on a dielectric material, said Si layer having a major surface;

and

b) spaced apart first and second contacts to the Si layer; and

the article also comprises

c) a voltage source for providing a bias voltage between said first and second contacts, and a receiver that is responsive to a current between said first and second contacts, said current being responsive to electromagnetic radiation of wavelength λ

incident on said major surface;

space="preserve" listing-type="equation">CHARACTERIZED IN THAT

d) the thickness t of said crystalline Si layer is less than an absorption length 0.5 α

^-1 in crystalline Si of said radiation of wavelength λ

, and is in the range 1.5-5 μ

m;

e) said dielectric material has a refractive index that is less than a refractive index of crystalline Si; and

f) at least a portion of said major surface is textured, such that said radiation of wavelength λ

is transmitted through said portion of the surface in substantially random directions, wherein associated with said at least portion of the surface is an average feature size, said average feature size being in the range 0.2(λ

/2n ) to 5(λ

/2n ), where n is the refractive index of crystalline Si for radiation of wavelength λ

.

2. Article according to claim 1, wherein said crystalline Si layer comprises Si with dopant concentration <

10¹⁶ cm^-3.

3. Article according to claim 1, wherein said first and second contacts are metal contacts.

4. Article according to claim 1, wherein said first and second contacts comprise, respectively, a region of a first conductivity type and a region of a second conductivity type in the crystalline Si layer.

5. Article according to claim 1, wherein each of said first and second contacts comprise a region of a first conductivity type in the crystalline Si layer.

6. Article according to claim 1, wherein each of said photodetector and receiver is disposed on a common Si body.

7. Article according to claim 6, the article comprising a plurality of said photodetectors disposed on a common Si body.

8. Article according to claim 7, wherein associated with each photodetector of said plurality is a receiver disposed on said common Si body.