Process of manufacturing a microelectric device using a removable support substrate and etch-stop

  • US 5,591,678 A
  • Filed: 06/07/1995
  • Issued: 01/07/1997
  • Est. Priority Date: 01/19/1993
  • Status: Expired due to Term
First Claim
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1. A method of fabricating a microelectronic device, comprising the steps of:

  • furnishing a first substrate having an etchable layer, an etch-stop layer overlying the etchable layer, and a wafer overlying the etch-stop layer;

    forming a microelectronic circuit element in the exposed side of the wafer of the first substrate opposite to the side overlying the etch-stop layer;

    attaching the wafer of the first substrate to a second substrate; and

    etching away the etchable layer of the first substrate down to the etch-stop layer.

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