Programmable power generation circuit for flash EEPROM memory systems

  • US 5,592,420 A
  • Filed: 06/07/1995
  • Issued: 01/07/1997
  • Est. Priority Date: 10/17/1994
  • Status: Expired due to Term
First Claim
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1. In a flash EEPROM chip having a plurality of flash EEPROM cells, a programmable voltage generator circuit comprising:

  • means for generating, in response to an enable signal, a high voltage and a high current from a low voltage source connected to said high voltage and high current generating means;

    a plurality of registers respectively storing information indicative of a plurality of voltages suitable for programming, reading and erasing selected ones of said plurality of flash EEPROM cells; and

    a plurality of digital-to-analog converters connected to said high voltage and high current generating means, wherein individual ones of said plurality of digital-to-analog converters are coupled to at least one of said plurality of registers to provide an analog output voltage proportional to the information stored in said at least one register.

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