Apparatus for measuring the emissivity of a semiconductor wafer

• US 5,597,237 A
• Filed: 05/30/1995
• Issued: 01/28/1997
• Est. Priority Date: 05/30/1995
• Status: Expired due to Fees

• Current Assignee: Quantum Logic Corp.
• Original Assignee: Quantum Logic Corp.
• Inventors: Stein, Alexander
• Primary Examiner(s): GUTIERREZ, DIEGO F
• Application Number:
  US08/450,659
• Time in Patent Office: 609 Days
• Field of Search: 374/9, 374/126, 374/128, 356/446, 356/236, 250/228
• US Class Current: 374/9
• CPC Class Codes: G01J 5/0003 for sensing the radiant heat transfer of samples, e.g. emittance meter

Abstract

Apparatus adapted for use in measuring emissivity of a semiconductor wafer having a radiant energy reflecting surface includes a hollow integrating sphere having first and second spaced apart openings and having an inner surface upon which radiant energy can be distributed. The wafer is disposed with its reflecting surface adjacent the second opening. A first radiant energy detector is disposed on the inner surface of the sphere to detect the distributed energy. First means directs a beam of radiant energy through the first opening in the sphere in such manner that the beam passes through the sphere and the second opening to strike the wafer reflecting surface and is thereupon reflected into the sphere, the reflected energy being distributed upon the inner surface of the sphere and being detected by said first detector. Second means coupled to said first detector and responsive to its detected energy derives therefrom a first electrical signal proportional to the energy reflected from the reflecting surface of said wafer,

Claims

1. Apparatus adapted for use in measuring emissivity of a semiconductor wafer having first and second oppositely disposed reflecting surfaces, a portion of any radiant energy directed upon either surface passing through the wafer and its other surface, said apparatus comprising:

a first hollow integrating sphere having first and second spaced apart openings and having an inner surface upon which radiant energy can be distributed, said wafer being disposed with the first reflecting surface adjacent the second opening;

a second hollow integrating sphere having third and fourth spaced apart openings and having an inner surface upon which radiant energy can be distributed, said wafer being disposed with the second reflecting surface adjacent said fourth opening;

a first radiant energy detector disposed on the inner surface of the first sphere to detect the energy distributed thereon;

a second radiant energy detector disposed on the inner surface of the second sphere to detect the energy distributed thereon;

first means to direct a beam of radiant energy through said first opening in said first sphere in such manner that the beam passes through the first sphere and the second opening to strike the first wafer reflecting surface and is thereupon reflected into the first sphere, the reflected energy being distributed upon the inner surface of the first sphere and being detected by said first detector;

second means to direct a beam of radiant energy through said third opening in said second sphere in such manner that the beam passes through the second sphere and the fourth opening to strike said second reflecting surface of said wafer and is thereupon reflected into the second sphere, the reflected energy being distributed upon the inner surface of the second sphere and being detected by said second detector;

third means coupled to said first detector and responsive to its detected energy to derive therefrom a first electrical signal proportional to the energy reflected from said first reflecting surface of said wafer; and

fourth means coupled to said second detector and responsive to its detected energy to derive therefrom a second electrical signal proportional to the energy reflected from said second reflecting surface of said wafer.

2. Apparatus as set forth in claim 1 wherein one of the first and second means can be disabled while the other of said first and second means is actuated and a portion of the beam produced by the actuated one of the first and second means is transmitted through the wafter and is distributed on the surface of the sphere associated with the disabled one of the first and second means whereby the one of the third and fourth means associated with the deactuated one of the the first and second means yields a third electrical signal proportional to the energy transmitted through the wafer.