×

MOS transistor and method for making the same

  • US 5,597,739 A
  • Filed: 04/23/1996
  • Issued: 01/28/1997
  • Est. Priority Date: 01/19/1994
  • Status: Expired due to Term
First Claim
Patent Images

1. A method for making a transistor device of a type which comprises a semiconductor layer formed on an insulating layer and having a channel region, a doped source region and a doped drain region therein, comprising the steps of:

  • bonding a first semiconductor substrate as said semiconductor layer with a second semiconductor substrate, said first semiconductor substrate having an insulating layer thereon at a surface thereof;

    forming a gate electrode on a surface of said semiconductor layer opposite said insulating layer;

    using said gate electrode as a mask along with a resist mask, thereby forming by ion implantation said doped source and drain regions at portions of said semiconductor layer in a direction laterally outwardly of said gate electrode and terminating at a distance outwardly from said gate electrode which is shorter than an overall lateral extent of said semiconductor layer both to the left and to the right so that remaining portions of said semiconductor layer outwardly of said doped source and drain regions are not effected by the ion implantation, said channel region being defined between said doped source and doped drain regions beneath said gate electrode;

    forming gate side walls of an insulating material at both lateral sides of said gate electrode and substantially coincident in lateral extent with a width and lateral extent of said doped source and doped drain regions;

    using said gate side walls and said gate electrode as another mask, converting said remaining portions of said semiconductor layer outwardly of said source and drain regions which have not been effected by the ion implantation to first and second conductive regions respectively lying adjacent said doped source and doped drain regions, and wherein said first and second conductive regions are made of an element selected from the group consisting of a metal and a metal compound.

View all claims
  • 0 Assignments
Timeline View
Assignment View
    ×
    ×