Barrier metal technology for tungsten plug interconnection

  • US 5,600,182 A
  • Filed: 01/24/1995
  • Issued: 02/04/1997
  • Est. Priority Date: 01/24/1995
  • Status: Expired due to Term
First Claim
Patent Images

1. An integrated circuit device, comprising:

  • a first conducting layer having a top surface;

    a titanium layer on said first conducting layer, said titanium layer having a top surface;

    a titanium nitride layer in a range of 20 to 50 Angstroms thick on said titanium layer; and

    a second conducting layer on said titanium nitride layer.

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