Electronically controllable capacitors using power MOSFET's

• US 5,600,187 A
• Filed: 06/27/1994
• Issued: 02/04/1997
• Est. Priority Date: 06/27/1994
• Status: Expired due to Fees

• Current Assignee: General Electric Company
• Original Assignee: General Electric Company
• Inventors: Scott, Robert S., El-Hamamsy, Sayed-Amr, Borowiec, Joseph C.
• Primary Examiner(s): Shoop, Jr., William M.
• Assistant Examiner(s): PALADINI, ALBERT WILLIAM
• Application Number:
  US08/265,889
• Time in Patent Office: 953 Days
• Field of Search: 307/157, 307/109, 361/277, 361/271, 361/278, 361/280, 361/281, 257/312, 257/296, 315/248
• US Class Current: 307/157
• CPC Class Codes: H01G 7/00 Capacitors in which the capacitance is varied by non-mechanical means; Processes of their manufacture
• CPC Class Codes: H05B 41/2806 with semiconductor devices and specially adapted for lamps without electrodes in the vessel, e.g. surface discharge lamps, electrodeless discharge lamps
• CPC Class Codes: Y02B 20/00 Energy efficient lighting technologies, e.g. halogen lamps or gas discharge lamps

Abstract

An electrically controllable variable capacitor includes the interelectrode capacitance of at least one power MOSFET, a capacitance connected in series with the MOSFET and having one terminal connected to the drain or source thereof (the series capacitance), and bias control circuitry for controlling the bias voltage applied to the MOSFET. The voltage rating of the MOSFET, the peak amplitude of the applied ac signal, and the value of the series capacitance determine the range of dc bias voltages over which the MOSFET can be operated, and hence the capacitance range of the variable capacitor. Such a variable capacitance is useful as a tuning capacitor in an electrodeless HID lamp ballast.

Claims

1. A variable capacitor, comprising:

the output capacitance of at least one power MOSFET, said power MOSFET having drain, gate and source terminals, said gate and source terminals being connected together, said power MOSFET further having a body diode integral therewith;

a series capacitance connected in series with said MOSFET and having one terminal connected to the drain or source thereof; and

bias control circuitry for controlling a bias voltage applied to said MOSFET in a predetermined range of voltages depending on the voltage rating of said MOSFET, the peak amplitude of an ac signal applied to said MOSFET, and the value of said series capacitance, said bias control circuitry having a high impedance at operating frequencies therefor, the capacitance of said variable capacitor varying with said bias voltage.

2. The variable capacitor of claim 1 wherein said bias control circuitry comprises a controlled current source.

3. The variable capacitor of claim 2 wherein said controlled current source comprises a voltage source connected in series with a relatively large resistance.

4. The variable capacitor of claim 2 wherein said controlled current source comprises a voltage source connected in series with an inductance.

5. The variable capacitor of claim 1 wherein the value of said series capacitance is selected so as to limit the peak amplitude of said ac signal applied to the MOSFET.

6. The variable capacitor of claim 1 wherein said series capacitance comprises the output capacitance of another power MOSFET connected in series with said at least one power MOSFET such that the anodes or cathodes of the integral body diodes of said MOSFET'"'"'s are connected together.

7. The variable capacitor of claim 6 wherein said bias control circuitry comprises a controlled current source.

8. The variable capacitor of claim 6 wherein said controlled current source comprises a voltage source connected in series with a resistance or an inductance so as to reverse bias the body diodes of said MOSFET'"'"'s.

9. A ballast for an electrodeless high intensity discharge lamp of the type having an excitation coil situated about an arc tube for exciting an arc discharge therein upon application of a radio frequency signal to said excitation coil, said ballast comprising:

at least one switching device;

a ballast driver coupled to said switching device for driving said switching device; and

a resonant circuit coupled to said switching device, said resonant circuit comprising said excitation coil and at least one variable capacitor;

said variable capacitor comprising the output capacitance of at least one power MOSFET, said power MOSFET having drain, gate and source terminals, said gate and source terminals being connected together, said power MOSFET further having a body diode integral therewith, said variable capacitor further comprising a series capacitance connected in series with said MOSFET and having one terminal connected to the drain or source thereof, said variable capacitor further comprising bias control circuitry for controlling a bias voltage applied to said MOSFET in a predetermined range of voltages depending on the voltage rating of said MOSFET, the peak amplitude of an ac signal applied to said MOSFET, and the value of said series capacitance, said bias control circuitry having a high impedance at operating frequencies therefor, the capacitance of said variable capacitor varying with said bias voltage.

10. The ballast of claim 9 wherein said bias control circuitry comprises a controlled current source.

11. The ballast of claim 10 wherein said controlled current source comprises a voltage source connected in series with a relatively large resistance.

12. The ballast of claim 10 wherein said controlled current source comprises a voltage source connected in series with an inductance.

13. The variable capacitor of claim 9 wherein the value of said series capacitance is selected so as to limit the peak amplitude of said ac signal applied to the MOSFET.

14. The ballast of claim 9 wherein said series capacitance comprises the output capacitance of another power MOSFET connected in series with said at least one power MOSFET such that the anodes or cathodes of the integral body diodes of said MOSFET'"'"'s are connected together.

15. The ballast of claim 14 wherein said bias control circuitry comprises a controlled current source.

16. The ballast of claim 15 wherein said controlled current source comprises a voltage source connected in series with a resistance or an inductance so as to reverse bias the body diodes of said MOSFET'"'"'s.