Gas sensor and manufacturing method of the same

• US 5,605,612 A
• Filed: 11/10/1994
• Issued: 02/25/1997
• Est. Priority Date: 11/11/1993
• Status: Expired due to Fees

• Current Assignee: Goldstar Electron Co., Ltd. (SK Hynix Inc.)
• Original Assignee: Goldstar Electron Co., Ltd. (SK Hynix Inc.)
• Inventors: Park, Hyeon S., Kwon, Chul H., Lee, Kyu C., Yun, Dong H., Shin, Hyun W., Hong, Hyung K.
• Primary Examiner(s): Bell, Bruce F.
• Application Number:
  US08/337,065
• Time in Patent Office: 838 Days
• Field of Search: 422/83, 422/98, 422/94, 422/90, 422/97, 204/429, 204/426, 204/425, 437/51, 437/60, 437/918, 437/187, 437/184, 338/25, 338/34, 338/307, 338/308, 338/309, 338/314, 73/31.05, 73/31.06, 436/149, 436/153, 436/184
• US Class Current: 204/429
• CPC Class Codes: G01N 27/12 of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid , for detecting components in the fluid
• CPC Class Codes: G01N 33/0031 comprising two or more sensors, e.g. a sensor array

Abstract

A thin-film gas sensor and manufacturing method of the same is disclosed which includes a silicon substrate; an insulating layer formed on the surface of the silicon substrate; a heater formed in zigzag on the surface of said insulating layer; a temperature sensor formed in zigzag on the surface of the insulating layer in parallel with the heater; an interlayer insulating layer for electrically insulating the heater and temperature sensor formed on the insulating layer; a plurality of electrodes formed on the interlayer insulating layer placed between the heater and temperature sensor; a plurality of pairs of gas sensing layers disposed in an array on the electrodes and for reacting on detected gas; and a plurality of gas shielding layers formed on one gas sensing layer out of the pair of gas sensing layers and for shielding the detected gas so that the gas sensing layers do not react on the detected gas.

Claims

1. A thin-film gas sensor comprising:

a silicon substrate;

an insulating layer formed on a surface of said silicon substrate;

a heater of a plurality of lines in zigzag on a first region of a surface of said insulating layer, each of said lines being connected to adjacent lines;

a temperature sensor formed in zigzag on a second region of the surface of said insulating layer, a loop of heaters in zigzag on the first region and a loop of temperature sensors in zigzag on the second region being arranged in the same plane side by side with each other;

an interlayer insulating layer for electrically insulating said heater and temperature sensor;

a plurality of electrodes formed on said interlayer insulating layer;

a plurality of pairs of gas sensing layers disposed in an array on said electrodes and for reacting to detected gas; and

a plurality of gas shielding layers each formed on one gas sensing layer out of said pair of gas sensing layers.

2. A thin-film gas sensor as claimed in claim 1, wherein said heater and said temperature sensor are made of dual metal layer of platinum and tantalum.

3. A thin-film gas sensor as claimed in claim 1, wherein, of a pair of gas sensing layers, one gas sensing layer is a reference device and one gas sensing layer is a gas sensing portion, both are made of the same gas sensing material.

4. A thin-film gas sensor as claimed in claim 3, wherein, the gas sensing layer acting as the reference device is used for a load resistor.

5. A thin-film gas sensor as claimed in claim 1, wherein said plurality of electrodes comprise:

a plurality of common electrodes commonly connected to the gas sensing layer where the gas shielding layer is not formed and to the gas sensing layer where the gas shielding layer is formed;

a plurality of first electrodes connected to the gas sensing layer where the gas shielding layer is not formed; and

a plurality of second electrodes connected to the gas sensing layer where the gas shielding layer is formed.

6. A thin-film gas sensor as claimed in claim 5, wherein said respective electrodes are made of dual metal layer of platinum and tantalum.

7. A thin-film gas sensor as claimed in claim 1, wherein said plurality of gas sensing layers have different operation temperatures.

8. A thin-film gas sensor as claimed in claim 7, wherein a distance between lines of said heater is kept constant, and lines of said heater provided under said pair of gas sensing layers having a higher operation temperature are narrower than lines of said heater provided under said pair of gas sensing layers having a lower operation temperature.

9. A thin-film gas sensor as claimed in claim 7, wherein a width of lines of said heater is kept constant, and distances between lines of said heater provided under said pair of gas sensing layers having a higher operation temperature are narrower than distances between lines of said heater provided under said pair of gas sensing layers having a lower operation temperature.

10. A thin-film gas sensor as claimed in claim 7, wherein said heater has narrower line width and line distance under said pair of gas sensing layers having a higher operation temperature, and has broader line width and line distance under said pair of gas sensing layers having a lower operation temperature.

11. A method of manufacturing a thin-film gas sensor comprising the steps of:

forming an insulating layer on both sides of a silicon substrate;

simultaneously forming a heater and a temperature sensor formed in zigzag on said insulating layer on the front surface of said silicon substrate;

forming an interlayer insulating layer on said insulating layer where said temperature sensor and said heater are formed;

forming a contact hole by exposing part of said heater and said temperature sensor;

forming a pad for heater and a pad for temperature sensor on said interlayer insulating layer so that said contact hole comes into contact with said heater and said temperature sensor;

forming a plurality of electrodes on said interlayer insulating layer excluding a portion where said pad for heater and said temperature sensor are formed;

forming a plurality of pairs of gas sensing layers in an array form, on said interlayer insulating layer including said electrodes;

forming a gas shielding layer only on one gas sensing layer of said respective pairs of gas sensing layers;

etching said insulating layer formed on the back surface of said substrate, thereby exposing the insulating layer to the substrate; and

etching the exposed substrate with said insulating layer being as a mask.

12. A method of manufacturing a thin-film gas sensor as claimed in claim 11, further comprising, prior to the step of forming said insulating layer on said substrate, a step of forming a boron diffused layer by diffusing boron through said substrate.