Method for producing tips for atomic force microscopes

• US 5,611,942 A
• Filed: 03/02/1995
• Issued: 03/18/1997
• Est. Priority Date: 03/02/1995
• Status: Expired due to Fees

• Current Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: Okumura, Katsuya, Mitsui, Tadashi
• Primary Examiner(s): Chea, Thorl
• Application Number:
  US08/397,617
• Time in Patent Office: 747 Days
• Field of Search: 216/67, 216/79, 216/81, 216/66, 156/643.1, 156/647.1, 156/651.1, 156/653.1, 156/657.1, 156/662.1, 250/423 F, 250/306, 250/427, 250/307
• US Class Current: 216/67
• CPC Class Codes: B82Y 35/00 Methods or apparatus for measurement or analysis of nanostructures
• CPC Class Codes: G01Q 60/38 Probes, their manufacture, or their related instrumentation, e.g. holders
• CPC Class Codes: Y10S 438/978 forming tapered edges on substrate or adjacent layers
• CPC Class Codes: Y10S 977/878 Shape/taper

Abstract

The present invention is a method for forming a three point atomic force microscope tip. The method includes forming a substantially longitudinally extending solid tip having a peripheral surface and a forward end surface. Three masks are formed by deposition of carbon upon the solid tip, with a first and second of the masks formed along the peripheral surface, and a third of the masks formed on the forward end surface. The mask covered tip is then etched for a predetermined period of time to remove material from both the tip and the mask. After the predetermined period of time has elapsed, the masks are completely removed, and the removal of material from the tip results in the formation of three spikes which are pointed to the location from which the masks were removed.

Claims

1. A method for forming a three point atomic force microscope tip, the method comprising:

forming a substantially longitudinally extending solid silicon tip having a peripheral surface and a forward end surface;

forming three carbon masks upon the substantially longitudinally extending solid silicon tip, a first and second of said carbon masks formed along said peripheral surface, and a third of said carbon masks formed on the forward end surface;

etching said substantially longitudinally extending solid silicon tip for a first period of time to remove material from both said substantially longitudinally extending solid silicon tip and said carbon masks, wherein the removal of said material from said substantially longitudinally extending solid silicon tip and said carbon masks results in the formation of three spikes which are pointed at the location from which the carbon masks were removed.

2. The method recited in claim 1, said carbon masks formed by disposing the substantially longitudinally extending solid silicon tip in an atmosphere comprising a carbon based gas, and irradiating the substantially longitudinally extending solid silicon tip using an electron beam to form one said carbon mask at each location where the electron beam impinges upon the substantially longitudinally extending solid silicon tip.

3. The method recited in claim 2, the beam having a diameter of 500 Å

.

4. The method recited in claim 2, the carbon based gas comprising CF₄.

5. The method recited in claim 4, the beam impinging upon the tip for approximately 15 minutes.

6. The method recited in claim 2, the substantially longitudinally extending solid silicon tip etched by a dry etching process.

7. The method recited in claim 6, the dry etching process comprising plasma etching.

8. The method recited in claim 7, the plasma etching performed in an atmosphere of CF₄ and O₂.

9. The method recited in claim 8, the atmosphere comprising a volume ratio for CF₄ and O₂ of 2.5:

1.

10. The method recited in claim 6, the etching comprising ion etching.

11. The method recited in claim 2, the substantially longitudinally extending solid silicon tip etched by a wet etching process.

12. The method recited in claim 11, the wet etching comprising immersion in a solvent.

13. The method recited in claim 1, said substantially longitudinally extending solid silicon tip having a circular outer surface which tapers from a base towards the forward end surface.

14. The method recited in claim 13, the first and second of the masks formed approximately 500 Å

from the end surface.

15. A method for forming a three point atomic force microscope tip, the method comprising:

forming a frustum-shaped solid silicon tip having a tapered outer peripheral surface and a forward end surface, the frustum-shaped solid silicon tip having a base opposite the forward end surface;

disposing the frustum-shaped solid silicon tip in an atmosphere of CF₄ ;

irradiating the tapered outer peripheral surface at a first location to thereby form a first carbon mask upon the tapered outer peripheral surface at the first location, the first location being closer to the forward end surface than to the base;

irradiating the tapered outer peripheral surface at a second location to form a second carbon mask upon the tapered outer peripheral surface at the second location, the second location disposed at a substantially opposite location of the tapered outer peripheral surface;

irradiating the forward end surface to form a third carbon mask upon the forward end surface;

etching the frustum-shaped solid silicon tip having the first, second and third carbon masks thereon for a first period of time, the etching causing the silicon of the tip to be removed in a parabolic manner at the location between the first mask and the third mask, the second mask and the third mask, the first mask and the base, and the second mask and the base to thereby from first, second and third spikes, wherein, the etching also removes the masks such that after the etching, each said spike has a point which coincides with the location of one of the masks before removal.

16. The method recited in claim 15, the carbon mask formed to have a disc shape with a diameter of 500 Å

and a thickness of 10 Å

.

17. The method recited in claim 16, the frustum-shaped solid silicon tip formed to have a diameter of 1,000 Å

, at the base.

18. The method recited in claim 16, the first and second masks formed approximately 500 Å

from the end of the frustum-shaped solid silicon tip.

19. The method recited in claim 18, the frustum-shaped solid silicon tip etched for a duration of 15 seconds.

20. The method recited in claim 19, the frustum-shaped solid silicon tip etched by plasma etching.

21. A method of forming a three-point tip for an atomic force microscope comprising;

forming a tapered silicon tip;

performing chemical vapor deposition to form carbon masks on said tapered silicon tip at selected locations;

performing etching to remove material from the tapered silicon tip with the carbon masks more resistive to the etching than the material such that at locations covered by the masks, the material is removed in a manner which undercuts the carbon masks, wherein at the end of etching, the carbon masks will be removed and the tapered silicon tip will have three spikes formed near one end.

22. The method recited in claim 21, the material comprising silicon.

23. The method recited in claim 22, the deposition and etching occurring in the same chamber.