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Method for fabricating active substrate

  • US 5,622,814 A
  • Filed: 07/11/1994
  • Issued: 04/22/1997
  • Est. Priority Date: 04/20/1988
  • Status: Expired due to Fees
First Claim
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1. A sequential method for fabricating an active matrix substrate comprised of a plurality of gate electrodes, in a specific region of which a slit pattern is provided, made of a non-transparent material formed on a specific region of a first side of a transparent substrate having a second side opposite said first side, a first insulating layer formed on the transparent substrate and the gate electrodes, a first semiconductor layer formed on the first insulating layer, a second semiconductor layer formed on the first semiconductor layer, and a plurality of source and drain electrodes formed on the first insulating layer and said second semiconductor layer, said method comprising at least:

  • a step of coating a positive photoresist layer on the second semiconductor layer,a step of light over-exposure effected from the second side of the transparent substrate,a step of developing the positive photoresist layer, anda step of overetching to remove a part of the first and second semiconductor layers by using the developed positive photoresist layer as a mask.

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