Multiwavelength LED devices and methods of fabrication

• US 5,625,201 A
• Filed: 12/12/1994
• Issued: 04/29/1997
• Est. Priority Date: 12/12/1994
• Status: Expired due to Fees

• Current Assignee: Motorola, Inc. (Motorola Solutions, Inc.)
• Original Assignee: Motorola, Inc. (Motorola Solutions, Inc.)
• Inventors: Holm, Paige M., Gable, Benjamin W.
• Primary Examiner(s): Monin, Jr., Donald L.
• Application Number:
  US08/354,193
• Time in Patent Office: 869 Days
• Field of Search: 257/13, 257/81, 257/88, 257/89, 257/90, 257/94, 257/96, 257/97, 257/99
• US Class Current: 257/88
• CPC Class Codes: H01L 27/15 including semiconductor components having potential barriers, specially adapted for light emission
• CPC Class Codes: H01L 33/0016 having at least two p-n junctions

Abstract

A multiwavelength LED device including a first LED constructed to emit light of a first wavelength and a second LED constructed to emit light of a second wavelength, different than the first wavelength. The first and second LEDs are stacked vertically on a substrate and positioned to both emit light in the same direction. One of the LEDs is transparent to light emitted by the other of the LEDs so that light from both LEDs is emitted through a single aperture and can be mixed in intensity to produce a variety of wavelengths. The LEDs are individually addressable.

Claims

1. A multiwavelength light emitting diode device comprising:

a first light emitting diode constructed to emit light of a first wavelength and a second light emitting diode constructed to emit light of a second wavelength, different than the first wavelength, the first and second light emitting diodes being stacked together and positioned to both emit light in the same direction, and one of the first and second light emitting diodes being transparent to light emitted by the other of the first and second light emitting diodes, whereby light from both of the first and second light emitting diodes is emitted through a common aperture at a surface of the device, each of the first and second light emitting diodes including an active layer of material sandwiched between two confinement layers of material and first and second electrical contacts positioned with the two confinement layers and active layer sandwiched therebetween, the first electrical contact of each of the first and second light emitting diodes being formed with a first type of conductivity, and the second electrical contact of each of the first and second light emitting diodes being formed with a second type of conductivity, the first and second light emitting diodes being stacked together with the first electrical contact of the second light emitting diode being positioned in overlying contact with the second electrical contact of the first light emitting diode, and the first electrical contact of the first light emitting diode being coupled to a common terminal and the second electrical contact of the second light emitting diode being coupled to the common terminal to electrically connect the first and second light emitting diodes in a push-pull configuration.

2. A multiwavelength light emitting diode device as claimed in claim 1 wherein the one of the first and second light emitting diodes that is transparent emits light of a shorter wavelength than other of the first and second light emitting diodes.

3. A multiwavelength light emitting diode device as claimed in claim 2 wherein the light emitted by the first and second light emitting diodes is in a visible range.

4. A multiwavelength light emitting diode device as claimed in claim 3 wherein the light emitted by the one of the first and second light emitting diodes which is transparent is in a green range and the light emitted by the other of the first and second light emitting diodes is in a red range.

5. A multiwavelength light emitting diode device comprising:

a first surface emitting, heterostructure light emitting diode including an electrically conductive first contact layer, a first confinement layer positioned on the first contact layer, a first active layer positioned on the first confinement layer, a second confinement layer positioned on the first active layer, and an electrically conductive second contact layer positioned on the second confinement layer;

a second surface emitting, heterostructure light emitting diode including an electrically conductive first contact layer, a first confinement layer positioned on the first contact layer, a first active layer positioned on the first confinement layer, a second confinement layer positioned on the first active layer, and an electrically conductive second contact layer positioned on the second confinement layer;

the first contact layers of the first and second light emitting diodes being a first conductivity type and the second contact layers of the first and second light emitting diodes being a second conductivity type;

the first electrical contact layer of the second light emitting diode being positioned on the second contact layer of the first light emitting diode, and the first contact layer of the first light emitting diode being coupled to a common terminal and the second contact layer of the second light emitting diode being coupled to the common terminal to electrically connect the first and second light emitting diodes in a push-pull configuration; and

one of the first light emitting diode and the second light emitting diode being substantially transparent to light emitted by the other of the first light emitting diode and the second light emitting diode, whereby light from both of the first and second light emitting diodes is emitted through a common aperture at a surface of the device.

6. A multiwavelength light emitting diode device as claimed in claim 5 wherein the first electrical contact layer of the second light emitting diode and the second contact layer of the first light emitting diode are integrated into a single common layer.

7. A multiwavelength light emitting diode device as claimed in claim 5 wherein the active layers of the first and second light emitting diodes are formed of InAlGaP.

8. A multiwavelength light emitting diode device as claimed in claim 7 wherein the active layer of the one of the first and second light emitting diodes which is substantially transparent to light emitted by the other is formed with approximately 50% Al mole fraction and the active layer of the other of the first and second light emitting diodes is formed with approximately 0% Al mole fraction.

9. A multiwavelength light emitting diode device as claimed in claim 8 wherein the first and second confinement layers of the one of the first and second light emitting diodes which is substantially transparent to light emitted by the other are formed of material including InAlP and the first and second confinement layers of the other of the first and second light emitting diodes are formed of material including InGaAlP.

10. A multiwavelength light emitting diode device as claimed in claim 9 wherein the first and second electrical contact layers of the one of the first and second light emitting diodes which is substantially transparent to light emitted by the other and the first and second electrical contact layers of the other of the first and second light emitting diodes are formed of thin layers of material including heavily doped GaAs.

11. An array of multiwavelength light emitting diode devices comprising:

a substrate having a planar surface;

an array of devices formed on the surface of the substrate, the array being formed in rows and columns with a plurality of devices in each row and column; and

each device in the array of devices including

a first surface emitting, heterostructure light emitting diode including an electrically conductive first contact layer, a first confinement layer positioned on the first contact layer, a first active layer positioned on the first confinement layer, a second confinement layer positioned on the first active layer, and an electrically conductive second contact layer positioned on the second confinement layer;

a second surface emitting, heterostructure light emitting diode including an electrically conductive first contact layer, a first confinement layer positioned on the first contact layer, a first active layer positioned on the first confinement layer, a second confinement layer positioned on the first active layer, and an electrically conductive second contact layer positioned on the second confinement layer;

the first contact layers of the first and second light emitting diodes being a first conductivity type and the second contact layers of the first and second light emitting diodes being a second conductivity type;

the first electrical contact layer of the first light emitting diode being positioned on the surface of the substrate and the first electrical contact layer of the second light emitting diode being positioned on the second contact layer of the first light emitting diode, and the first contact layer of the first light emitting diode being coupled to a common terminal and the second contact layer of the second light emitting diode being coupled to the common terminal to electrically connect the first and second light emitting diodes in a push-pull configuration; and

the second light emitting diode being substantially transparent to light emitted by the first light emitting diode, whereby light from both of the first and second light emitting diodes is emitted through a common aperture at a surface of the device.

12. An array of multiwavelength light emitting diode devices as claimed in claim 11 wherein the substrate is semi-insulating GaAs.

13. An array of multiwavelength light emitting diode devices as claimed in claim 11 wherein the active layers of the first and second light emitting diodes are formed of InAlGaP.

14. A multiwavelength light emitting diode device as claimed in claim 13 wherein the active layer of the second light emitting diode is formed with approximately, 50% Al mole fraction and the active layer of the first light emitting diodes is formed with approximately 0% Al mole fraction.

15. A multiwavelength light emitting diode device as claimed in claim 14 wherein the first and second confinement layers of the second light emitting diode is formed of material including InAlP and the first and second confinement layers of the first light emitting diode is formed of material including InGaAlP.

16. A multiwavelength light emitting diode device as claimed in claim 15 wherein the first and second electrical contact layers of the first and second light emitting diodes are formed of thin layers of material including heavily doped GaAs.