Method for fabricating MIS semiconductor device
First Claim
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1. A method for fabricating a MIS semiconductor device comprising:
- a first step of forming a wiring comprising an anodizable material on an active region provided in a semiconductor with an insulating film between said wiring and said active region;
a second step of anodizing the surface of said wiring, to form an anodic oxide;
a third step of injecting an impurity into the semiconductor in a self-aligning manner using said wiring or a region defined by said wiring substantially as a mask after the anodization;
a fourth step of removing the anodic oxide after the injecting step;
a fifth step of improving a crystallinity of an impurity region in said semiconductor into which the impurity has been injected by rendering a boundary between said impurity region and said active region or a portion adjacent thereto substantially transparent to light to be radiated and by radiating said light from thereabove.
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Abstract
A MIS type semiconductor device and a method for fabricating the same characterized in that impurity regions are selectively formed on a semiconductor substrate or semiconductor thin film and are activated by radiating laser beams or a strong light equivalent thereto from above so that the laser beams or the equivalent strong light are radiated onto the impurity regions and on an boundary between the impurity region and an active region adjoining the impurity region.
143 Citations
14 Claims
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1. A method for fabricating a MIS semiconductor device comprising:
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a first step of forming a wiring comprising an anodizable material on an active region provided in a semiconductor with an insulating film between said wiring and said active region; a second step of anodizing the surface of said wiring, to form an anodic oxide; a third step of injecting an impurity into the semiconductor in a self-aligning manner using said wiring or a region defined by said wiring substantially as a mask after the anodization; a fourth step of removing the anodic oxide after the injecting step; a fifth step of improving a crystallinity of an impurity region in said semiconductor into which the impurity has been injected by rendering a boundary between said impurity region and said active region or a portion adjacent thereto substantially transparent to light to be radiated and by radiating said light from thereabove. - View Dependent Claims (2, 3, 4)
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5. A method for fabricating a MIS semiconductor device comprising:
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forming a gate electrode comprising an anodizable material on a gate insulating film provided on an active region provided in a semiconductor; anodizing said gate electrode to form an anodic oxide on a surface of said gate electrode; injecting an impurity into said semiconductor in a self-aligning manner using said anodic oxide as a mask; removing said anodic oxide after said injecting step; and irradiating a light to an impurity region in said semiconductor into which said impurity is injected by said injecting step, and to a boundary between said impurity region and said active region with said gate electrode as a mask after said removing step to improve a crystallinity of said semiconductor of said boundary and said impurity region. - View Dependent Claims (6, 7, 8, 9, 10)
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11. A method for fabricating a MIS semiconductor device comprising:
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forming a gate electrode comprising an anodizable material on a gate insulating film provided on an active region provided in a semiconductor; anodizing said gate electrode to form a first anodic oxide on a surface of said gate electrode; injecting an impurity into said semiconductor in a self-aligning manner using said first anodic oxide as a mask; removing said first anodic oxide after said injecting step; irradiating a light to an impurity region in said semiconductor into which said impurity is injected by said injecting step, and to a boundary between said impurity region and said active region with said gate electrode as a mask after said removing step to improve a crystallinity of said semiconductor of said boundary and said impurity region; and anodizing said gate electrode to form a second anodic oxide on the surface of said gate electrode after said irradiating step.
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12. A method for fabricating a MIS semiconductor device comprising:
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forming a gate electrode comprising an oxidizable material on a gate insulating film provided on an active region provided in a semiconductor; oxidizing said gate electrode to form an oxide on a surface of said gate electrode; injecting an impurity into said semiconductor in a self-aligning manner using said oxide as a mask; removing said oxide after said injecting step; and irradiating a light to an impurity region in said semiconductor into which said impurity is injected by said injecting step, and to a boundary between said impurity region and said active region with said gate electrode as a mask after said removing step to improve a crystallinity of said semiconductor of said boundary and said impurity region.
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13. A method for producing a semiconductor device comprising the steps of:
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forming a first electrode wiring including an anodizable material on an insulating film provided on a semiconductor film having an active region and an impurity region; anodizing the first electrode wiring to form a first anodic oxide on a surface of the first electrode wiring; introducing an impurity into the semiconductor film using the first anodic oxide as a mask; removing the first anodic oxide after the introducing step; irradiating a light to the impurity region into which the impurity has been introduced and to a boundary between the impurity region and the active region using the first electrode wiring as a mask after the removing step, to improve a crystallinity of the impurity region and the boundary; forming a covering film to cover the first electrode wiring; anodizing at least one second electrode wiring other than the first electrode wiring to form a second anodic oxide on a surface of the second electrode wiring; and forming a third electrode wiring on the second anodic oxide.
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14. A method for producing a semiconductor device comprising the steps of:
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forming a gate electrode including an anodizable material on an insulating film provided on a semiconductor film having an active region and an impurity region; anodizing the gate electrode to form an anodic oxide on a surface of the gate electrode; introducing an impurity into the semiconductor film using the anodic oxide as a mask; etching the anodic oxide to decrease a thickness of the anodic oxide after the introducing step; and irradiating a light to the impurity region into which the impurity is introduced and to a boundary between the impurity region and the active region using the gate electrode and the etched anodic oxide as masks after the removing step, to improve a crystallinity of the impurity region and the boundary.
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Specification