Process of making ESD protection devices for use with antifuses

• US 5,629,227 A
• Filed: 04/18/1995
• Issued: 05/13/1997
• Est. Priority Date: 07/07/1993
• Status: Expired due to Fees

• Current Assignee: Actel Corporation (Microchip Technology Incorporated)
• Original Assignee: Actel Corporation (Microchip Technology Incorporated)
• Inventors: Chen, Wenn-Jei
• Primary Examiner(s): Bowers, Jr., Charles L.
• Assistant Examiner(s): GURLEY, LYNNE ANN
• Application Number:
  US08/425,094
• Time in Patent Office: 756 Days
• Field of Search: 437/60, 437/195, 437/922, 257/530, 257/355, 257/50
• US Class Current: 438/600
• CPC Class Codes: H01L 23/5252 comprising anti-fuses, i.e. connections having their state changed from non-conductive to conductive
• CPC Class Codes: H01L 23/60 Protection against electrostatic charges or discharges, e.g. Faraday shields
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 2924/3011 Impedance

Abstract

A process electrostatic discharge ("ESD") protection device is incorporated on a chip with the antifuses that it is designed to protect and is formed as close in time as possible to the deposition of the antifuse material layer (the layer being protected) so that ESD protection is available at all practical stages of processing. According to a first aspect of the invention, an ESD protection device is formed by exposing edges of an antifuse bottom electrode during the antifuse cell open mask/etch step. It is biased on during processing. A sharp corner of the electrode and a deep aspect ratio provide degrade antifuse performance for the protection cell (resulting in reduced breakdown voltage and increased leakage current) and, as designed, the protection cell will rupture before other cells because it has a lower breakdown voltage. Once the protection cell ruptures, it will continue to conduct and protect other antifuses from ESD damage. When processing is complete, the protection cell is biased off and has no effect on the remaining antifuses. According to a second aspect of the present invention, a deep valley topography is created under a bottom electrode of the protection cell. Because the cell is deeper than the other antifuse cells while retaining the same cell opening size, the step coverage within the protection cell will be reduced and the protection cell will have a lower breakdown voltage than the regular antifuse cells formed with it. In all other respects, it operates as set forth regarding the first aspect of the invention.

Claims

1. A process for fabricating an integrated circuit including at least one antifuse and an ESD protection cell for protecting said at least one antifuse from ESD damage during fabrication of said integrated circuit, said process comprising the steps of:

a. forming an ESD protection cell lower electrode;

b. forming a lower electrode for said at least one antifuse;

c. depositing an interlayer dielectric layer over said ESD protection cell lower electrode and said lower electrode for said at least one antifuse;

d. opening (i) an ESD protection cell opening having a first areal size and (ii) an antifuse cell opening having substantially said first areal size through said interlayer dielectric layer so as to expose, respectively, (i) a portion of a top surface, a portion of a side surface, and a corner therebetween of said ESD protection cell lower electrode and (ii) said lower electrode of said at least one antifuse;

e. depositing an antifuse material layer over said interlayer dielectric layer, into said ESD protection cell opening and into said antifuse cell opening so as to overlie said ESD protection cell lower electrode and said lower electrode of said at least one antifuse.