Electron tunneling device using ferromagnetic thin films

  • US 5,629,922 A
  • Filed: 03/21/1995
  • Issued: 05/13/1997
  • Est. Priority Date: 02/22/1995
  • Status: Expired due to Term
First Claim
Patent Images

1. A device forming a junction having a resistance comprising:

  • a first electrode having a first magnetization direction,a second electrode having a second magnetization direction, andan electrical insulator between the first and the second electrodes, wherein applying a small magnitude of electromagnetic energy to the junction reverses at least one of the magnetization directions and causes a change in the resistance by at least 10% at room temperature.

View all claims

    Thank you for your feedback