Synchronous dual port RAM
First Claim
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1. A structure for a programmable logic device comprising:
- a first logic generator having a Read Address terminal and a Write Address Terminal;
a second logic generator having a Read Address terminal and a Write Address Terminal;
addressing circuitry coupled to said Read and Write Address terminals of said first and second logic generators, wherein a control signal provided to said addressing circuitry provides a signal to the Write Address terminals of said first and second logic generators.
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Abstract
A configurable logic block (CLB) in the dual port mode uses one address to write the same information in a first RAM and a second RAM. The input signals provided to the second function generator can be used to read, independently from and even asynchronously with, the write operation, thereby dramatically increasing the speed of applications using the two sets of RAM. A CLB in the synchronous mode latches the appropriate address and data signals, and generates a strobed write enable signal. The strobed signal is self-timed, i.e. the write operation is fully automatic, thereby ensuring that a write operation occurs within one clock cycle.
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10 Claims
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1. A structure for a programmable logic device comprising:
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a first logic generator having a Read Address terminal and a Write Address Terminal; a second logic generator having a Read Address terminal and a Write Address Terminal; addressing circuitry coupled to said Read and Write Address terminals of said first and second logic generators, wherein a control signal provided to said addressing circuitry provides a signal to the Write Address terminals of said first and second logic generators. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A configurable logic block configuration comprising:
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a first set of random access memory cells; a second set of random access memory cells; first addressing means for providing a first Read address signal to address one of said first set of random access memory cells; second addressing means for providing a second Read address signal to address one of said second set of random access memory cells; and means for selectively providing said first Read signal or said second Read address signal to write to one of said first set of random access memory cells. - View Dependent Claims (8, 9, 10)
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Specification