LCD with bus lines overlapped by pixel electrodes and photo-imageable insulating layer therebetween

• US 5,641,974 A
• Filed: 04/12/1996
• Issued: 06/24/1997
• Est. Priority Date: 06/06/1995
• Status: Expired due to Term

• Current Assignee: First Chicago/NBD Bank N.A., OIS Optical Imaging Systems, Inc. (KOCH Industries Incorporated), LG Display Co., Ltd.
• Original Assignee: OIS Optical Imaging Systems, Inc. (KOCH Industries Incorporated)
• Inventors: den Boer, Willem, Zhong, John Z. Z., Gu, Tieer
• Primary Examiner(s): Jackson, Jerome
• Assistant Examiner(s): Wilson, Allan R.
• Application Number:
  US08/631,455
• Time in Patent Office: 438 Days
• Field of Search: 257/59, 257/72, 349/138
• US Class Current: 257/59
• CPC Class Codes: G02F 1/133357 Planarisation layers
• CPC Class Codes: G02F 1/13606 having means for reducing parasitic capacitance
• CPC Class Codes: G02F 1/136213 Storage capacitors associated with the pixel electrode
• CPC Class Codes: G02F 1/136227 Through-hole connection of the pixel electrode to the active element through an insulation layer
• CPC Class Codes: G02F 1/136286 Wiring, e.g. gate line, drain line
• CPC Class Codes: G02F 1/1368 in which the switching element is a three-electrode device G02F1/136277 takes precedence
• CPC Class Codes: G02F 2202/42 Materials having a particular dielectric constant
• CPC Class Codes: H01L 27/12 the substrate being other than a semiconductor body, e.g. an insulating body
• CPC Class Codes: H01L 27/124 with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits wiring structures per se H01L23/52
• CPC Class Codes: H01L 27/1248 with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
• CPC Class Codes: H01L 27/14603 Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
• CPC Class Codes: H01L 27/14676 X-ray, gamma-ray or corpuscular radiation imagers measuring X-, gamma- or corpuscular radiation G01T1/00
• CPC Class Codes: H01L 29/66765 Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
• CPC Class Codes: H01L 29/78636 with supplementary region or layer for improving the flatness of the device

Abstract

This invention is related to an active matrix liquid crystal display (AMLCD) having a high pixel aperture ratio. The display has an increased pixel aperture ratio because the pixel electrodes are formed over the insulating layer so as to overlap portions of the array address lines. Both the manufacturability and capacitive cross-talk of the TFT-based device are improved due to the use of a photo-imageable insulating layer between the pixel electrodes and the address lines.

Claims

1. A high aperture liquid crystal display (LCD) comprising:

first and second substrates;

a liquid crystal layer sandwiched between said first and second substrates;

an array of thin film transistors (TFTs) disposed on said first substrate, said array of TFTs including a plurality of address lines connected to said TFTs;

an array of substantially transparent pixel electrodes disposed on said first substrate, a plurality of the pixel electrodes in said array of pixel electrodes each overlapping at least one of said address lines thereby increasing the pixel aperture ratio of the LCD;

a substantially transparent photo-imageable insulating layer disposed on said first substrate between said address lines and said pixel electrodes at least in the areas of overlap and areas adjacent source electrodes of the TFTs; and

said substantially transparent photo-imageable insulating layer having a dielectric constant less than about 5.0, and having a first group of contact vias defined therein by photo-imaging, wherein said substantially transparent pixel electrodes are in electrical communication with corresponding TFT source electrodes through said contact vias of said first group that are defined in said substantially transparent insulating layer.

2. The LCD of claim 1, further comprising an auxiliary storage capacitor electrode associated with each pixel electrode, and a second group of contact vias defined in said insulating layer by photo-imaging, and wherein each of said pixel electrodes is in electrical communication with a corresponding storage capacitor electrode through one of the vias in said second group of contact vias.

3. The LCD of claim 1, wherein said insulating layer is a negative resist layer.

4. The LCD of claim 1, wherein said insulating layer includes one of 2-Ethoxyethyl acetate and Benzocyclobutene (BCB).

5. The LCD of claim 1, wherein the dielectric constant ε

of said insulating layer is less than about 3.0.

6. The LCD of claim 1, wherein said insulating layer includes an organic mixture of 2-Ethoxyethyl acetate, methacrylate derivative copolymer, and polyfunctional acrylate.

7. The LCD of claim 1, wherein said insulating layer is from about 2-3 μ

m thick.

8. The LCD of claim 1, wherein said insulating layer covers substantially the entire viewing area of the display except for contact vias formed therein.

9. The LCD of claim 1, wherein the pixel aperture ratio of the LCD is at least about 68%.

10. The LCD of claim 1, wherein the overlap distance or width is from about 0-2 μ

m in the overlap areas and the address line-pixel capacitance is less than about 12.0 fF when the length of the overlap area is about 100 μ

m.

11. The LCD of claim 10, wherein the capacitance is less than about 8.0 fF.

12. A liquid crystal display comprising:

a first substrate;

a liquid crystal layer;

an array of pixel electrodes for permitting image data to be displayed to a viewer;

a plurality of gate lines and TFT gate electrodes formed on said first substrate;

a semiconductor layer disposed over said gate lines and gate electrodes on said first substrate and being patterned so as to remain in an array of TFT areas;

a source and a drain electrode formed over the semiconductor layer in each TFT area on said first substrate, a TFT channel being defined between the corresponding source and drain electrodes thereby forming an array of TFTs on said first substrate;

a plurality of drain lines connected to said drain electrodes;

wherein a plurality of said pixel electrodes overlap at least one of a gate and drain line thereby increasing the pixel aperture ratio of the display;

a substantially transparent photo-imageable insulating layer which is a resist, said photo-imageable resist insulating layer being disposed on said first substrate between (i) said pixel electrodes and (ii) said TFTs and said drain and gate lines so as to insulate the pixel electrodes from said lines and said TFTs; and

wherein said substantially transparent resist insulating layer has a dielectric constant less than about 5.0.

13. The LCD of claim 12, further comprising a first group of contact vias photo-imaged in said insulating layer for allowing said pixel electrodes to contact said TFT source electrodes, and wherein said insulating layer is a negative resist.

14. The LCD of claim 13, further comprising a second group of contact vias photo-imaged in said insulating layer for allowing said pixel electrodes to contact corresponding storage capacitor electrodes.

15. The LCD of claim 12, wherein said insulating layer includes one of BCB and 2-Ethoxyethyl acetate.

16. The LCD of claim 12, wherein the gate and drain lines crisscross on said first substrate and wherein the pixel aperture ratio of the LCD is at least about 68%, and further comprising a second substrate wherein said liquid crystal layer is disposed between said first and second substrates.

17. The LCD of claim 12, wherein the dielectric constant of said insulating layer is less than about 3.0.

18. The display of claim 12, wherein said resist insulating layer is a negative resist.

19. The display of claim 12, wherein the overlap distance is from about 0-2 μ

m and the line-pixel capacitance is less than about 12.0 fF when the length of the overlap area is about 100 μ

m as a reference.

20. A liquid crystal display comprising:

first and second substrates;

a liquid crystal layer disposed between said first and second substrates;

first and second orientation films sandwiching said liquid crystal layer therebetween, said first orientation film being mounted on said first substrate and said second orientation film being mounted on said second substrate;

an array of thin film transistors disposed on said first substrate, each of said thin film transistors in said array including a gate electrode, a source electrode, and a drain electrode;

a plurality of address lines disposed on said first substrate and operatively associated with said array of thin film transistors;

a plurality of pixel electrodes disposed on said first substrate for enabling image data to be transmitted to a viewer, a number of said pixel electrodes each overlapping at least one of said address lines so as to provide for a liquid crystal display having a higher pixel aperture ratio than if there was no such overlapping;

a substantially transparent photo-imageable insulating layer disposed on said first substrate between said address lines and said pixel electrodes in at least areas of said overlapping; and

wherein said substantially transparent photo-imageable insulating layer has a dielectric constant less than about 5.0, and has a group of contact vias defined therein by photo-imaging, and wherein each of said pixel electrodes communicates with a corresponding one of said thin film transistors through one of said contact vias defined in said substantially transparent insulating layer.