Array circuitry with conductive lines, contact leads, and storage capacitor electrode all formed in layer that includes highly conductive metal

CAFC
  • US 5,648,674 A
  • Filed: 06/07/1995
  • Issued: 07/15/1997
  • Est. Priority Date: 06/07/1995
  • Status: Expired due to Term
First Claim
Patent Images

1. A product comprising:

  • a substrate with a surface at which circuitry can be formed;

    array circuitry formed at the surface of the substrate, the array circuitry comprising;

    N conductive lines extending across the surface of the substrate, where N is an integer greater than one; and

    along each of the N conductive lines, one or more units of cell circuitry;

    each unit of cell circuitry comprising;

    a switching element;

    the switching element comprising first and second conductive channel leads, a channel extending between the first and second conductive channel leads, and first and second contact leads;

    the first and second conductive channel leads and the channel comprising semiconductor material;

    the first and second contact leads comprising highly conductive metal;

    the second contact lead being electrically connected to the second conductive channel lead and the first contact lead being electrically connected between the first conductive channel lead and the conductive line so that the channel provides an electrical connection between the second contact lead and the conductive line when the channel is in a conductive state;

    a capacitive element having a first electrode, a second electrode, and a capacitor dielectric between the first and second electrodes;

    the second electrode being electrically connected to the second contact lead; and

    a conductive element electrically connected to the second electrode;

    the array circuitry further comprising;

    a first patterned conductive layer that includes the first electrode of each unit of cell circuitry;

    a first insulating layer;

    the capacitor dielectric of each unit of cell circuitry including a part of the first insulating layer;

    the capacitor dielectric covering the first electrode;

    a second patterned conductive layer that comprises highly conductive metal other than indium tin oxide;

    the second patterned conductive layer including the N conductive lines and the first and second contact leads and the second electrode of each unit of cell circuitry;

    the second contact lead and the second electrode being joined in the second patterned conductive layer;

    the second electrode covering the capacitor dielectric;

    a second insulating layer that extends over the second electrode of each unit of cell circuitry;

    the second insulating layer covering the second electrode except in an exposed part of the second electrode;

    the second insulating layer having an opening defined therein over the exposed part; and

    a third patterned conductive layer over the second insulating layer;

    the third patterned conductive layer being a layer of indium tin oxide;

    the third patterned conductive layer including the conductive element of each unit of cell circuitry;

    the conductive element extending over the second electrode;

    the conductive element contacting the exposed part of the second electrode so that the conductive element is electrically connected to the second contact lead through the second electrode.

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