Thin film semiconductor device and photoelectric conversion device using the thin film semiconductor device

• US 5,686,734 A
• Filed: 07/14/1995
• Issued: 11/11/1997
• Est. Priority Date: 01/22/1993
• Status: Expired due to Term

• Current Assignee: Canon Kabushiki Kaisha (Canon Inc.)
• Original Assignee: Canon Kabushiki Kaisha (Canon Inc.)
• Inventors: Okamoto, Hiroaki, Sugawa, Shigetoshi, Atoji, Tadashi, Hamakawa, Yoshihiro
• Primary Examiner(s): CARROLL, JAMES J
• Application Number:
  US08/502,603
• Time in Patent Office: 851 Days
• Field of Search: 257/16, 257/19, 257/21, 257/22, 257/55, 257/63, 257/65, 257/72, 257/77, 257/613
• US Class Current: 257/16
• CPC Class Codes: H01L 29/165 in different semiconductor regions , e.g. heterojunctions
• CPC Class Codes: H01L 31/03765 including AIVBIV compounds or alloys, e.g. SiGe, SiC
• CPC Class Codes: H01L 31/1075 in which the active layers, e.g. absorption or multiplication layers, form an heterostructure, e.g. SAM structure
• CPC Class Codes: Y02E 10/548 Amorphous silicon PV cells

Abstract

A high performance thin film semiconductor device having a heterojunction such as a photoelectric conversion device is disclosed. In accordance with the present invention, the thin film semiconductor device comprises a thin semiconductor layer which forms a heterojunction with a non-single crystal silicon layer or non-single crystal silicon-germanium layer, wherein the valence band discontinuity at the heterointerface arising from the difference in optical energy bandgap is as small as 0.3 eV or less and wherein the thin semiconductor layer has an optical energy bandgap greater than 2.8 eV, so that hole transport performance may not be degraded. Such a thin semiconductor layer may be formed by using silane gas and methane gas with a flow rate ratio greater than 30 at a deposition rate less than 0.5 Å/sec.

Claims

1. A thin film semiconductor device comprising at least one thin semiconductor layer which forms a heterojunction with a non-single crystal silicon layer or non-single crystal silicon-germanium layer, wherein the valence band discontinuity arising from the difference in optical energy bandgap at the heterointerface between said thin semiconductor layer and said non-single crystal silicon layer or said non-single crystal silicon-germanium layer is less than 0.3 eV, wherein said thin semiconductor layer is a non-single crystal silicon carbide layer including hydrogen atoms, said non-single crystal silicon carbide layer having a value x greater than 0.45 where said non-single crystal silicon carbide layer is described as Si_1-x C_x :

H and the number of hydrogen atoms bonded with carbon atoms in said non-single crystal silicon carbide layer is at least five times the number of hydrogen atoms bonded with silicon atoms, and wherein said thin semiconductor layer has an optical energy bandgap greater than 2.8 eV and the conduction bandgap discontinuity arising from the difference in optical energy bandgap is greater than 1.0 eV.

2. A thin film semiconductor device according to claim 1, wherein said thin semiconductor layer is formed on a side of said device on which light is incident.

3. A thin film semiconductor device according to claim 1, including a semiconductor region having a multi-layer structure composed of a plurality of layers consisting of said thin semiconductor layer which forms a heterojunction with said non-single crystal silicon layer or said non-single crystal silicon-germanium layer.

4. A thin film semiconductor device according to claim 3, wherein said semiconductor region is a light emitting region.

5. A thin film semiconductor device according to claim 1, wherein said thin film semiconductor device is a photoelectric conversion device utilizing avalanche effects.

6. A thin film semiconductor device according to claim 5, wherein said photoelectric conversion device includes at least a light absorption layer and a carrier multiplication layer for multiplying carriers generated in said light absorption layer.

7. A thin film semiconductor device according to claim 6, wherein said carrier multiplication layer includes at least one semiconductor layer having a gradient in optical energy bandgap such that the optical energy bandgap of said semiconductor layer changes continuously from a minimum optical energy bandgap to a maximum optical energy bandgap, said semiconductor layer forming a stepping back structure having an abrupt energy band discontinuity at the heterointerface region between a wide optical energy bandgap region and a narrow optical energy bandgap region, carrier multiplication occurring in said heterointerface region.

8. A thin film semiconductor device according to claim 7, wherein said heterointerface region, in which carrier multiplication occurs, of said carrier multiplication layer has the minimum energy bandgap in the range from 1.4 eV to 1.7 eV.

9. A thin film semiconductor device according to claim 1, wherein said non-single crystal silicon layer includes amorphous silicon.

10. A thin film semiconductor device according to claim 1, wherein said non-single crystal silicon-germanium layer includes amorphous silicon-germanium.

11. A thin film semiconductor device according to claim 1, wherein said non-single crystal silicon carbide layer includes amorphous silicon carbide.

12. A thin film semiconductor device having a multi-layer semiconductor region and an insulating layer, comprising:

a plurality of non-single crystal silicon layers or a plurality of non-single crystal silicon-germanium layers; and

a plurality of thin semiconductor layers which are disposed between said plurality of non-single crystal silicon layers or of non-single crystal silicon-germanium layers in such a manner that said plurality of thin semiconductor layers form heterojunctions;

wherein the valence band discontinuity arising from the difference in optical energy bandgap at said heterojunction between said thin semiconductor layer and said non-single crystal silicon layer or said non-crystal silicon-germanium layer is less than 0.3 eV, wherein said thin semiconductor is a non-crystal silicon carbide layer including hydrogen atoms, said non-single crystal carbide layer having a value x greater than 0.45 where said non-single crystal silicon carbide layer is described as Si_1-x C_x ;

H and the number of hydrogen atoms bonded with carbon atoms in said non-single crystal silicon carbide layer is at least five times the number of hydrogen atoms bonded with silicon atoms, and wherein said thin semiconductor layer has an optical energy bandgap greater than 2.8 eV and the conduction bandgap discontinuity arising from the difference in optical energy bandgap is greater than 1.0 eV.

13. A thin film semiconductor device according to claim 12, wherein said non-single crystal silicon layer includes amorphous silicon.

14. A thin film semiconductor device according to claim 12, wherein said non-single crystal silicon-germanium layer includes amorphous silicon-germanium.

15. A thin film semiconductor device according to claim 12, wherein said non-single crystal silicon layer includes amorphous silicon carbide.

16. An information processing device comprising:

a thin film semiconductor device comprising at least one thin semiconductor layer which forms a heterojunction with a non-single crystal silicon layer or non-single crystal silicon-germanium layer, wherein the valence band discontinuity arising from the difference in optical energy bandgap at the heterointerface between said thin semiconductor layer and said non-single crystal silicon layer or said non-single crystal silicon-germanium layer is less than 0.3 eV, wherein said thin semiconductor layer is a non-single crystal silicon carbide layer including hydrogen atoms, said non-single crystal silicon carbide layer having a value x greater than 0.45 where said non-single crystal silicon carbide layer is described as Si_1-x C_x ;

H and the number of hydrogen atoms bonded with carbon atoms in said non-single crystal silicon carbide layer is at least five times the number of hydrogen atoms bonded with silicon atoms, and wherein said thin semiconductor layer has an optical energy bandgap greater than 2.8 eV and the conduction bandgap discontinuity arising from the difference in optical energy bandgap is greater than 1.0 eV; and

a signal output device, said thin film semiconductor device being formed on said signal output device or said thin film semiconductor device being electrically connected to said signal output device, said signal output device comprising at least one of means including (i) storage means for storing an electrical signal generated by said thin film semiconductor device, (ii) scanning means for scanning said electrical signal, and (iii) read-out means for reading out said electrical signal.

17. An information processing device according to claim 16, wherein said non-single crystal silicon layer includes amorphous silicon.

18. An information processing device according to claim 16, wherein said non-single crystal silicon-germanium layer includes an amorphous silicon-germanium layer.

19. An information processing device according to claim 16, wherein said thin semiconductor layer is formed on a side of said device on which light is incident.

20. An information processing device according to claim 16, wherein said non-single crystal silicon carbide layer includes amorphous silicon carbide.

21. An information processing device according to claim 16, wherein said thin film semiconductor device is a photoelectric conversion device utilizing avalanche effects.

22. An information processing device according to claim 21, wherein said photoelectric conversion device includes at least a light absorption layer and a carrier multiplication layer for multiplying carriers generated in said light absorption layer.

23. An information processing device according to claim 22, wherein said carrier multiplication layer includes at least one semiconductor layer having a gradient in optical energy bandgap such that the optical energy bandgap of said semiconductor layer changes continuously from a minimum optical energy bandgap to a maximum optical energy bandgap, said semiconductor layer forming a stepping back structure having an abrupt energy band discontinuity at the heterointerface region between a wide optical energy bandgap region and a narrow optical energy bandgap region, carrier multiplication occurring in said heterointerface region.

24. An information processing device according to claim 23, wherein said heterointerface region, in which carrier multiplication occurs, of said carrier multiplication layer has the minimum energy bandgap in the range from 1.4 eV to 1.7 eV.