Highly insulating monocrystalline gallium nitride thin films

CAFC
  • US 5,686,738 A
  • Filed: 01/13/1995
  • Issued: 11/11/1997
  • Est. Priority Date: 03/18/1991
  • Status: Expired due to Term
First Claim
Patent Images

1. A semiconductor device comprising:

  • a substrate, said substrate consisting of a material selected from the group consisting of(100) Silicon, (111) silicon, (0001) sapphire, (11-20) sapphire, (1-102) sapphire, (111) gallium aresenide, (100) gallium aresenide, magnesium oxide, zinc oxide and silicon carbide;

    a non-single crystalline buffer layer having a thickness of about 30 Å

    to about 500 Å

    , comprising a first material grown on said substrate, the first material consisting essentially of gallium nitride; and

    a first growth layer grown on the buffer layer, the first growth layer comprising gallium nitride and a first dopant material.

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