Magnetoresistive sensor having at least a layer system and a plurality of measuring contacts disposed thereon, and a method of producing the sensor

• US 5,686,838 A
• Filed: 06/19/1995
• Issued: 11/11/1997
• Est. Priority Date: 12/21/1992
• Status: Expired due to Term

• Current Assignee: Siemens AG
• Original Assignee: Siemens AG
• Inventors: van den Berg, Hugo
• Primary Examiner(s): O'shea, Sandra L.
• Assistant Examiner(s): Patidar, Jay M.
• Application Number:
  US08/454,340
• Time in Patent Office: 876 Days
• Field of Search: 324/207.21, 324/252, 338/32 R, 338/32 H, 360/113, 360/126
• US Class Current: 324/252
• CPC Class Codes: B82Y 25/00 Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
• CPC Class Codes: G01R 33/093 using multilayer structures, e.g. giant magnetoresistance sensors thin magnetic films H01F10/00
• CPC Class Codes: H01F 10/3272 by use of anti-parallel coupled [APC] ferromagnetic layers, e.g. artificial ferrimagnets [AFI], artificial [AAF] or synthetic [SAF] anti-ferromagnets

Abstract

A magnetoresistive sensor includes at least one measuring layer having a magnetization M_M in the plane of the layer, and a bias layer having a fixed magnetization M_B in the plane of the layer, which are exchange-decoupled from one another by an interlayer. To achieve magnetostatic decoupling of the measuring layer and the bias layer coupled anti-ferromagnetically in an "artificial anti-ferromagnet" to a magnetic layer through a coupling layer. In a preferred embodiment, the magnetizations of the measuring layer M_M and of the bias layer M_B are at least approximately orthogonal to each other. The resulting sensor has a linear characteristic and maximum sensitivity.

Claims

1. A magnetoresistive sensor comprising:

a) a layer system, wherein said layer system includes;

a1) at least one measuring layer which, in the plane of said measuring layer, has a magnetization which at least in one direction depends reversibly on an applied magnetic field, and in the absence of said magnetic field, said magnetization corresponds to a predefined ground state magnetization;

a2) at least on one side of the measuring layer a bias layer having a magnetization in the plane of said bias layer, said magnetization being at least approximately constant in the measuring range of the magnetic field;

a3) an interlayer, disposed between the bias layer and the measuring layer, by which interlayer the bias layer is at least approximately magnetically exchange-decoupled from the measuring layer; and

a4) a magnetic layer which is coupled anti-ferromagnetically to the bias layer through a coupling layer, said coupling layer being disposed between the bias layer and the anti-ferromagnetically coupled magnetic layer; and

b) measuring contacts at the layer system to detect a resistance signal which is a measure for the applied magnetic field.

2. The magnetoresistive sensor of claim 1, with a second coupling layer disposed on the side of the magnetic layer facing away from the bias layer, and a second bias layer disposed on the side of the second coupling layer facing away from the magnetic layer, whereby the second coupling layer anti-ferromagnetically couples the second bias layer to the magnetic layer.

3. The magnetoresistive sensor of claim 2, wherein the Curie temperatures of said bias layers differ from that of said magnetic layer.

4. The magnetoresistive sensor of claim 1, wherein the Curie temperatures of said bias layer differs from that of said magnetic layer.

5. The magnetoresistive sensor of claim 1, wherein said bias layer has a coercive field strength which differs from that of said magnetic layer.

6. The magnetoresistive sensor of claim 1, wherein said bias layer is magnetized along a preferred axis.

7. The magnetoresistive sensor of claim 1, wherein the ground state magnetization of said measuring layer and the magnetization of the bias layer are aligned at least approximately perpendicular to each other.

8. The magnetoresistive sensor of claim 1, wherein the ground state magnetization of said measuring layer and the magnetization of said bias layer are aligned parallel to each other.

9. The magnetoresistive sensor of claim 1, wherein the materials for the layers are chosen in such a way that when magnetizations of the measuring layer and the bias layer are aligned in at least approximately a parallel fashion, the minority spin state for the electrons in the measuring layer is also the minority spin state for the electrons in all the other magnetic layers and at the interfaces thereof.

10. The magnetoresistive sensor of claim 1, wherein the magnitude of the magnetization of the bias layer is chosen to be smaller than that of the ground state magnetization of the measuring layer.

11. The magnetoresistive sensor of claim 1, wherein the measuring layer and the bias layer extend in a longitudinal direction that is perpendicular to the ground state magnetization of the measuring layer.

12. The magnetoresistive sensor of claim 1, wherein the measuring layer is shorter than said bias layer in at least one direction parallel to the magnetization of the bias layer.

13. The magnetoresistive sensor of claim 12, wherein the layer system further comprises an edge zone without a measuring layer disposed towards the edges of said layer system, a measuring zone with a measuring layer and a transition zone between the edge zone and a measuring zone, wherein the thickness of the measuring layer increases continuously.

14. The magnetoresistive sensor of claim 1, wherein the measuring contacts are arranged at a predetermined distance from the edges of said layer system.

15. The magnetoresistive sensor of claim 1, wherein said measuring contacts are arranged on an outer layer of said sensor.

16. The magnetoresistive sensor of claim 1, wherein said measuring layer is replaced by a first measuring layer and a second measuring layer with an interlayer disposed therebetween so that the interlayer exchange-decouples the first measuring layer from the second measuring layer.

17. The magnetoresistive sensor as claimed in claim 16, wherein the ground state magnetization of the first measuring layer and the ground state magnetization of the second measuring layer are aligned at least approximately antiparallel with respect to one another in the absence of an external applied magnetic field.

18. The magnetoresistive sensor as claimed in claim 17, characterized in that the ground state magnetization of the first measuring layer and the ground state magnetization of the second measuring layer are each inclined by at least approximately the same angle with respect to the direction perpendicular to the magnetization of the bias layer and together enclose an angle of less than 180°

.

19. The magnetoresistive sensor of claim 1, wherein the measuring layer is magnetized in the direction of a preferred axis in the absence of an external applied magnetic field.

20. The magnetoresistive sensor of claim 1, wherein each magnetic layer is magnetized along a preferred axis.

21. A method for fabricating a magnetoresistive sensor having a multilayer structure including a measuring layer, a bias layer, an interlayer between said measuring layer and bias layer, a magnetic layer and a coupling layer between the bias layer and the magnetic layer, comprising the following steps:

a) selecting magnetic materials for the bias layer and the magnetic layer having different Curie temperatures and at least approximately equal magnetizations at a given operating temperature and different magnetizabilities at a magnetizing temperature that differs from the operating temperature;

b) bonding together the bias layer, the coupling layer, and the magnetic layer by;

i) bringing the bias layer in contact with one side of the coupling layer, and bringing the magnetic layer in contact with the other side of the coupling layer;

ii) bringing the assembly of step i) to the magnetizing temperature; and

iii) arranging said assembly in a temperature-dependent biasing magnetic field which has a predetermined value at least at said magnetizing temperature;

c) bringing said assembly to the operating temperature.

22. A method for fabricating a magnetoresistive sensor of claim 21, comprising the following steps:

a) selecting said magnetic materials that have different coercive field strengths;

b) saturating the bias layer, the coupling layer, and the magnetic layer are in a saturation magnetic field when they are bonded together.