Process for producing a semiconductor device

  • US 5,688,712 A
  • Filed: 05/07/1996
  • Issued: 11/18/1997
  • Est. Priority Date: 04/16/1992
  • Status: Expired due to Term
First Claim
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1. A process of producing a semiconductor device, said process comprising the steps of:

  • defining a first area and a second area with a boundary area therebetween on a semiconductor substrate;

    forming a first electronic element on the first and second areas;

    forming a second electronic element only on the first area;

    forming a first conductive layer extending from the first area to the boundary area;

    forming a first insulating layer entirely on the substrate;

    removing the portion of the first insulating layer that covers the first area, and thereby, exposing the first conductive layer;

    forming a second insulating layer entirely on the substrate;

    selectively, removing the first and second insulating layers to form a throughhole; and

    forming a second conductive layer extending from the first area to the second area.

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