Method of making a silicon based biomedical sensor
First Claim
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1. A method of making contacts through a semiconductor substrate of a first conductivity type, comprising the steps of:
- forming a first region of a second conductivity type at the front surface of the substrate;
forming a second region of the second conductivity type at the back side of the substrate;
diffusing said first region and said second region to form a third region and a fourth region of the second conductivity type extending through the substrate from the front surface to the backside of the substrate;
forming a first oxide layer on the front surface of the substrate;
forming a second oxide layer on the backside of the substrate;
forming a first aperture and second aperture both in said first oxide layer and said second oxide layer said first aperture being aligned with said third region, and said second aperture being aligned with said fourth region;
forming a first electrical contact over said first aperture on said backside;
forming a second electrical contact over said second aperture on said backside, said second electrical contact being insulated from said first electrical contact; and
forming a reactive layer over the front surface of substrate, said reactive layer being electrically connected to said first and second electrical contacts.
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Abstract
A sensor 20 is formed on semiconductor substrate 22. Dielectric layers 23 and 24 are formed on the face and backside of substrate 22, respectively. Metal leads 26 and 28 contact the substrate through openings in the dielectric layer 23. The leads 26 and 28 are also connected to the set of interleaved longitudinal contact fingers 27 and 29. Additionally, a pair of backside contacts 30 and 32 are formed on the dielectric layer 24. The backside contact 30 is in contact only with the metal lead 26 through a conductive region 34.
71 Citations
4 Claims
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1. A method of making contacts through a semiconductor substrate of a first conductivity type, comprising the steps of:
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forming a first region of a second conductivity type at the front surface of the substrate; forming a second region of the second conductivity type at the back side of the substrate; diffusing said first region and said second region to form a third region and a fourth region of the second conductivity type extending through the substrate from the front surface to the backside of the substrate; forming a first oxide layer on the front surface of the substrate; forming a second oxide layer on the backside of the substrate; forming a first aperture and second aperture both in said first oxide layer and said second oxide layer said first aperture being aligned with said third region, and said second aperture being aligned with said fourth region; forming a first electrical contact over said first aperture on said backside; forming a second electrical contact over said second aperture on said backside, said second electrical contact being insulated from said first electrical contact; and
forming a reactive layer over the front surface of substrate, said reactive layer being electrically connected to said first and second electrical contacts. - View Dependent Claims (2, 3, 4)
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Current AssigneeTexas Instruments, Inc.
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Original AssigneeTexas Instruments, Inc.
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InventorsKrenik, William R., Appleton, Mark
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Primary Examiner(s)Bowers, Jr., Charles L.
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Assistant Examiner(s)Radomsky, Leon
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Application NumberUS08/632,032Time in Patent Office599 DaysField of Search257/253, 257/777, 437/974, 437/954, 437/228, 437/86, 437/40 R, 437/41 R, 148/DIG. 52, 148/DIG. 135, 148/DIG. 35US Class Current438/400CPC Class CodesG01N 27/12 of a solid body in dependen...Y10S 148/035 Diffusion through a layerY10S 148/052 Face to face deposition
