Method for manufacturing porous blue light emitting diode
First Claim
1. A method for manufacturing a porous blue light emitting diode comprising the steps of:
- (a) preparing a silicon substrate having a top surface and a back surface;
(b) applying a conducting layer on said back surface;
(c) annealing said substrate coated with said conducting layer in an inert gas atmosphere;
(d) applying an anti-corrosion layer on said conducting layer;
(e) immersing said anti-corrosion layer-applied substrate in a hydrofluoric acid aqueous solution with a concentration of about 5% by volume;
(f) applying a voltage between a cathode and said substrate to produce a current density of about 2.5 mA/cm2 for about 20 minutes to erode said substrate and form a porous layer having Si wires on said top surface of said substrate; and
(g) oxidizing said porous layer in a furnace for making sizes of said Si wires small enough for emitting light having a peak occurring at a wavelength shorter than about 520 nm.
1 Assignment
0 Petitions
Accused Products
Abstract
A method for manufacturing a porous blue light emitting diode comprising the steps of preparing a silicon substrate having a back surface, applying a conducting layer on the back surface, annealing the substrate coated with the conducting layer in an inert gas atmosphere, applying an anti-corrosion layer on the conducting layer, immersing the anti-corrosion layer-applied substrate in a hydrofluoric acid aqueous solution with a concentration of about 5% by volume, applying a voltage to the resulting layers for eroding the anti-corrosion layer-applied substrate to form a porous layer having Si wires on a top surface of the substrate, and oxidizing the porous layer for making sizes of the Si wires small enough for emitting light having a peak occuring at a wavelength shorter than about 520 nm. This method offers a simple and feasible way to fabricate a porous blue light emitting diode.
124 Citations
14 Claims
-
1. A method for manufacturing a porous blue light emitting diode comprising the steps of:
-
(a) preparing a silicon substrate having a top surface and a back surface; (b) applying a conducting layer on said back surface; (c) annealing said substrate coated with said conducting layer in an inert gas atmosphere; (d) applying an anti-corrosion layer on said conducting layer; (e) immersing said anti-corrosion layer-applied substrate in a hydrofluoric acid aqueous solution with a concentration of about 5% by volume; (f) applying a voltage between a cathode and said substrate to produce a current density of about 2.5 mA/cm2 for about 20 minutes to erode said substrate and form a porous layer having Si wires on said top surface of said substrate; and (g) oxidizing said porous layer in a furnace for making sizes of said Si wires small enough for emitting light having a peak occurring at a wavelength shorter than about 520 nm. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
-
Specification
-
- Resources
-
Current AssigneeNational Science Council
-
Original AssigneeNational Science Council
-
InventorsLee, Ming-Kwei
-
Primary Examiner(s)Gorgos, Kathryn L.
-
Assistant Examiner(s)Leader, William T.
-
Application NumberUS08/631,271Time in Patent Office634 DaysField of Search205/123, 205/124, 205/157, 205/223, 205/224, 205/229, 205/666, 437/15, 437/23, 437/170, 437/181, 437/228, 437/248, 437/905US Class Current205/123CPC Class CodesH01L 33/346 containing porous siliconY10S 438/96 Porous semiconductor
