Process optimization in gas phase dry etching

  • US 5,711,849 A
  • Filed: 05/03/1995
  • Issued: 01/27/1998
  • Est. Priority Date: 05/03/1995
  • Status: Expired due to Term
First Claim
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1. A device fabrication method comprising the steps of:

  • providing a plasma etching apparatus comprising a substrate therein, said substrate comprising a top surface and a film overlying said top surface, said film comprising a top film surface;

    etching said top film surface to define a relatively non-uniform etching profile on said film, and defining etch rate data comprising an etch rate and a spatial coordinate which defines a position within said relatively non-uniform etching profile on said substrate, said etching comprising a reaction between a gas phase etchant and said film; and

    extracting a surface reaction rate constant from said etch rate data, and using said surface reaction rate constant in the fabrication of a device.

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