Multilayer amorphous silicon antifuse

  • US 5,726,484 A
  • Filed: 03/06/1996
  • Issued: 03/10/1998
  • Est. Priority Date: 03/06/1996
  • Status: Expired due to Term
First Claim
Patent Images

1. An antifuse comprising:

  • first and second conductive layers; and

    an antifuse layer, positioned between the first and second conductive layers, having a thickness of less than about 100 nm, the antifuse layer including first and second undoped amorphous silicon layers and an oxide layer positioned between the first and second undoped amorphous silicon layers, wherein the oxide layer has a thickness of less than about 10 nm.

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