SOI transistor having a self-aligned body contact

• US 5,729,039 A
• Filed: 05/03/1996
• Issued: 03/17/1998
• Est. Priority Date: 06/29/1994
• Status: Expired due to Fees

• Current Assignee: International Business Machines Corporation
• Original Assignee: International Business Machines Corporation
• Inventors: Hsu, Louis Lu-Chen, Beyer, Klaus Dietrich, Buti, Taqi Nasser, Hsieh, Chang-Ming
• Primary Examiner(s): Crane, Sara W.
• Assistant Examiner(s): Hardy, David B.
• Application Number:
  US08/642,834
• Time in Patent Office: 683 Days
• Field of Search: 257/347, 257/350, 257/365
• US Class Current: 257/347
• CPC Class Codes: H01L 29/41783 Raised source or drain electrodes self aligned with the gate
• CPC Class Codes: H01L 29/66772 Monocristalline silicon transistors on insulating substrates, e.g. quartz substrates H01L29/66666 takes precedence; thin film FinFETs H01L29/66795
• CPC Class Codes: H01L 29/78612 for preventing the kink- or the snapback effect, e.g. discharging the minority carriers of the channel region for preventing bipolar effect
• CPC Class Codes: Y10S 148/15 Silicon on sapphire SOS

Abstract

An SOI transistor has a self-aligned body contact formed through an extension to the gate, thereby forming the body contact with minimal increase in area and also avoiding the need to tie the source to the body, as in prior art schemes that passed the body contact through the source. The body contact aperture is formed by raising the source and drain to define an initial aperture, depositing a conformal layer that is etched to create aperture-defining sidewalls and etching the contact aperture using these sidewalls to define sidewall support members that support insulating sidewalls to isolate the collection electrode from both the gate and from the source and drain.

Claims

1. An SOI field effect transistor having a self-aligned body contact and comprising a source and drain doped with a first polarity and formed in a silicon layer doped with a second polarity and disposed above an insulating substrate, and a gate insulator and gate disposed above a body portion of said silicon layer between said source and drain and extending a gate length along a first axis passing between said source and drain, further comprising:

a gate extension connected to said gate and also disposed above said gate insulator and above a collection portion of said silicon layer, said body portion and said collection portion being in proximity,

whereby minority carriers may flow from said body portion to said collection portion;

raised source and drain contact members capped with cap dielectric having a cap top surface above said gate top surface;

a collection electrode doped with said second polarity and disposed in contact with said silicon layer on a collection side of said gate extension opposite said gate, whereby minority carriers may flow from said body through said collection portion of said silicon layer to said collection electrode, said gate extension having gate sidewall support members connected to said gate and disposed between said collection electrode and said source and drain, said collection electrode being isolated from said gate by at least one insulating sidewall; and

conductive source and drain members disposed above said source and drain and being isolated from said gate sidewall members by an insulating sidewall, in which said gate extension extends along said first axis by an extension length greater than said gate length, said gate extension having a self-aligned aperture therein and having isolating sidewalls on an interior of said aperture, whereby said minority carriers are guided to said collection electrode by said gate extension in electrical contact with said gate and insulated from said silicon layer by said gate insulator.

2. An SOI field effect transistor having a self-aligned body contact and comprising a source and drain doped with a first polarity and formed in a silicon layer doped with a second polarity and disposed above an insulating substrate, and a gate insulator and gate disposed above a body portion of said silicon layer between said source and drain and extending a gate length along a first axis passing between said source and drain, further comprising:

a gate extension connected to said gate and also disposed above said gate insulator and above a collection portion of said silicon layer, said body portion and said collection portion being in proximity,

whereby minority carriers may flow from said body portion to said collection portion;

raised source and drain contact members capped with a cap dielectric having a cap top surface above said gate top surface;

a collection electrode doped with said second polarity and disposed in contact with said silicon layer on a collection side of said gate extension opposite said gate, whereby minority carriers may flow from said body through said collection portion of said silicon layer to said collection electrode, said gate extension having gate sidewall support members connected to said gate and disposed between said collection electrode and said source and drain, said collection electrode being isolated from said gate by at least one insulating sidewall; and

conductive source and drain members disposed above said source and drain and being isolated from said gate sidewall members by an insulating sidewall, in which said gate extension extends along said first axis by an extension length substantially the same as said gate length, said gate extension having a self-aligned aperture therein and having isolating sidewalls on an interior of said aperture, whereby said minority carriers are guided to said collection electrode by said gate extension in electrical contact with said gate and insulated from said silicon layer by said gate insulator.

3. A pair of SOI field effect transistors each comprising a first and second source and drain formed in a silicon layer disposed above an insulating substrate, and first and second gate insulator and first and second gates disposed above a first and second body portions of said silicon layer between said first and second source and drain and extending a gate length along a first axis, said first and second gates being aligned along a second axis perpendicular to said first axis and further comprising:

a gate extension connected between said first and second gates and also disposed above said gate insulator and above a collection portion of said silicon layer, said first and second body portions and said collection portion being in proximity, whereby minority carriers may flow from said first and second body portions to said collection portion; and

a collection electrode doped with said second polarity and disposed in contact with said silicon layer on said gate extension, whereby minority carriers may flow from said first and second bodies through said collection portion of said silicon layer to said collection electrode, said collection electrode being isolated from said gate by at least one insulating sidewall.