Field emission devices employing enhanced diamond field emitters

• US 5,744,195 A
• Filed: 11/19/1996
• Issued: 04/28/1998
• Est. Priority Date: 10/31/1994
• Status: Expired due to Term

• Current Assignee: Bell Semiconductor, LLC (Hilco Inc. (d/b/a Hilco Global))
• Original Assignee: Lucent Technologies, Inc. (Nokia Corporation)
• Inventors: Jin, Sungho, Zhu, Wei, Kochanski, Gregory Peter, Seibles, Lawrence
• Primary Examiner(s): King, Roy V.
• Application Number:
  US08/752,234
• Time in Patent Office: 525 Days
• Field of Search: 427/249, 427/533, 427/122, 313/311, 445/50
• US Class Current: 427/249.9
• CPC Class Codes: H01J 1/3042 microengineered, e.g. Spindt-type
• CPC Class Codes: H01J 2201/30403 characterised by the emitter shape
• CPC Class Codes: H01J 2201/30457 Diamond
• CPC Class Codes: H01J 2329/00 Electron emission display panels, e.g. field emission display panels

Abstract

Applicants have discovered methods for making, treating and using diamonds which substantially enhance their capability for low voltage emission. Specifically, applicants have discovered that defect-rich diamonds--diamonds grown or treated to increase the concentration of defects--have enhanced properties of low voltage emission. Defect-rich diamonds are characterized in Raman spectroscopy by a diamond peak at 1332 cm^-1 broadened by a full width at half maximum ΔK in the range 5-15 cm^-1 (and preferably 7-11 cm^-1). Such defect-rich diamonds can emit electron current densities of 0.1 mA/mm² or more at a low applied field of 25 V/μm or less. Particularly advantageous structures use such diamonds in an array of islands or particles each less than 10 μm in diameter at fields of 15 V/μm or less.

Claims

1. A method for making a diamond field emitter comprising the steps of:

providing a substrate;

growing diamond material on said substrate in the form of diamond islands less than 10 μ

m in diameter, said diamond material grown by CVD deposition of a gas consisting of more than 2 atomic percent of carbon in hydrogen at a temperature less than 900°

C., whereby said diamond material is grown as diamond characterized by a broadband diamond peak at K=1332 cm^-1 in Raman spectroscopy with a full width at half maximum in the range 7-11 cm^-1 ;

said diamond material emitting electrons in a current density of at least 0.1 mA/mm² at an applied field of 25 V/μ

m or less.

2. The method of claim 1 wherein said CVD deposition is carried out using a gas mixture of methane and hydrogen.

3. The method of claim 1 wherein said substrate comprises Si or Mo.

4. The method of claim 1 wherein said diamond islands are less than 2 μ

m in diameter.

5. A method for making a diamond field emitter comprising the step of:

providing a substrate having diamond material thereon; and

growing on said diamond material an additional layer of diamond electron emitting material characterized by a diamond peak at 1332 cm^-1 in Raman spectroscopy broadened to a full width at half maximum in the range 7-11 cm^-1, thereby growing a diamond material emitting electron in a current density of at least 0.1 mA/mm² at an applied field of 25V/μ

m or less.

6. The method of claim 5 wherein said providing a substrate comprises providing a substrate with diamond material having said peak with a full width at half maximum<

5 cm^-1.

7. A method for making a diamond field emitter comprising the steps of:

providing a substrate having diamond material thereon; and

bombarding said diamond material with particles to broaden the diamond peak at 1332 cm^-1 in Raman spectroscopy to a full width at half maximum in the range 5-15 cm^-1.

8. The method of claim 7 wherein said particles are carbon, boron, sodium or phosphorous ions.