Field emission devices employing enhanced diamond field emitters

  • US 5,744,195 A
  • Filed: 11/19/1996
  • Issued: 04/28/1998
  • Est. Priority Date: 10/31/1994
  • Status: Expired due to Term
First Claim
Patent Images

1. A method for making a diamond field emitter comprising the steps of:

  • providing a substrate;

    growing diamond material on said substrate in the form of diamond islands less than 10 μ

    m in diameter, said diamond material grown by CVD deposition of a gas consisting of more than 2 atomic percent of carbon in hydrogen at a temperature less than 900°

    C., whereby said diamond material is grown as diamond characterized by a broadband diamond peak at K=1332 cm-1 in Raman spectroscopy with a full width at half maximum in the range 7-11 cm-1 ;

    said diamond material emitting electrons in a current density of at least 0.1 mA/mm2 at an applied field of 25 V/μ

    m or less.

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