Process for producing semiconductor components between which contact is made vertically

• US 5,767,001 A
• Filed: 11/03/1995
• Issued: 06/16/1998
• Est. Priority Date: 05/05/1993
• Status: Expired due to Term

• Current Assignee: Polaris Innovations Limited (Wi-LAN Inc.)
• Original Assignee: Siemens AG
• Inventors: Klose, Helmut, Bertagnolli, Emmerich
• Primary Examiner(s): QUACH, TUAN N
• Application Number:
  US08/545,650
• Time in Patent Office: 956 Days
• Field of Search: 438/455, 438/456, 438/459, 438/667, 438/363, 438/426, 438/622, 438/623, 438/624, 438/631, 438/632, 438/633, 438/648, 438/650, 438/660, 438/661
• US Class Current: 438/455
• CPC Class Codes: H01L 21/76898 formed through a semiconductor substrate
• CPC Class Codes: H01L 2225/06513 Bump or bump-like direct electrical connections between devices, e.g. flip-chip connection, solder bumps
• CPC Class Codes: H01L 2225/06524 Electrical connections formed on device or on substrate, e.g. a deposited or grown layer
• CPC Class Codes: H01L 2225/06541 Conductive via connections through the device, e.g. vertical interconnects, through silicon via [TSV] manufacturing via connections per se H01L21/76898
• CPC Class Codes: H01L 23/481 Internal lead connections, e.g. via connections, feedthrough structures
• CPC Class Codes: H01L 25/0657 Stacked arrangements of devices
• CPC Class Codes: H01L 25/50 Multistep manufacturing processes of assemblies consisting of devices, each device being of a type provided for in group H01L27/00 or H01L29/00 H01L21/50 takes precedence
• CPC Class Codes: H01L 27/0688 Integrated circuits having a three-dimensional layout
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

A process for producing components having a contact structure provides for vertical contact-making, in which, for the connection of a metal contact of a first component to a metal contact of a second component, the substrate is etched out, starting from the top, in a region provided for a vertical, conductive connection, this recess is filled with a metal so that said metal is connected to the surface of the metal contact, the rear side of the substrate is removed until the metal projects beyond the rear side, a metallization layer made of a metal having a low melting point, for example AuIn, is applied to the metal contact of the second component, the surface of the second component is provided with a planar layer, the two components are arranged vertically with respect to one another and a permanent contact is produced between the metal of the first component and the metallization layer of the second component by pressing one onto the other and heating.

Claims

1. A process for producing a semiconductor component having a contact structure for making vertical contact with a further semiconductor component, comprising the steps of:

in a first step, producing a contact location on a substrate having a layer structure on one side, said contact location being selected from a group consisting of;

a contact layer of semiconductor material and with which contact is to be made, and a metal contact and an interconnect,

in a second step, using a mask while etching a vertical recess into said substrate, starting from the one side provided with said layer structure, to a depth which is sufficient for a subsequent fourth step,

in a third step, depositing a metal into said vertical recess and onto said contact location so that a portion of said metal which is introduced into said vertical recess is electrically conductively connected to that portion of said metal which is applied to said contact location, and

in a fourth step, removing a second side of the substrate which is opposite the one side until the metal in the vertical recess projects beyond said second side of the substrate.

2. The process as claimed in claim 1, wherein the semiconductor components are of silicon.

3. A process for producing semiconductor components between which electrically conductive contact is made vertically, comprising the steps of:

in a first step, producing a first semiconductor component including the substeps of;

in a first substep, producing a contact location on a substrate having a layer structure on one side, said contact location being selected from a group consisting of;

a contact layer of semiconductor material and with which contact is to be made, and a metal contact and an interconnect;

in a second substep, using a mask while etching a vertical recess into said substrate, starting from the one side provided with said layer structure, to a depth which is sufficient for s subsequent fourth step;

in a third substep, depositing a metal into said vertical recess and into said contact location so that a portion of said metal which is introduced into said vertical recess is electrically conductively connected to that portion of said metal which is applied to said contact location, and

in a fourth substep, removing a second side of the substrate which is opposite the one side until the metal in the vertical recess projects beyond said second side of the substrate and producing a second semiconductor component which is to make vertical contact with said first semiconductor component and has a layer structure having a contact location with which contact is to be made, said contact location being selected from a group consisting of a contact layer of semiconductor material and a metal contact and an interconnect,

in a second step, using a mask to apply a metallization layer made of a metal having a lower melting point than that of an interconnect to said contact location as a region provided for making contact with the first semiconductor component,

in a third step, arranging said first and second semiconductor components above one another in such a way that the metal projecting out of the vertical recess in the substrate of the first semiconductor component is situated above the region, provided for contact-making, of said metallization layer of the second semiconductor component, and

in a fourth step, producing a permanent electrically conductive contact with the metal of the first semiconductor component by heating said metallization layer.

4. The process as claimed in claim 3, wherein tungsten is used for the metal projecting through the vertical recess in the substrate of the first semiconductor component, and

AuIn is used for the metallization layer of the second semiconductor component, AuIn having a lower melting point than tungsten.