Fabrication method for metal-to-metal antifuses incorporating a tungsten via plug

  • US 5,780,323 A
  • Filed: 11/12/1996
  • Issued: 07/14/1998
  • Est. Priority Date: 04/12/1990
  • Status: Expired due to Fees
First Claim
Patent Images

1. A method of fabricating an antifuse disposed on an integrated circuit comprising the steps of:

  • a. disposing a first metallization layer on an insulating portion of the integrated circuit;

    b. disposing an antifuse material layer over said first metallization layer;

    c. disposing an etch-stop layer over said antifuse material layer;

    d. patterning and etching said antifuse material layer;

    e. disposing a dielectric layer over said etch-stop layer;

    f. etching a via entirely through said dielectric layer to expose said etch-stop layer;

    g. disposing a plug of a conductive material within said via;

    h. disposing a second metallization layer over said dielectric layer and said plug and in electrical contact with said plug.

View all claims
    ×
    ×

    Thank you for your feedback

    ×
    ×