Resputtering to achieve better step coverage of contact holes

  • US 5,783,282 A
  • Filed: 10/07/1996
  • Issued: 07/21/1998
  • Est. Priority Date: 10/07/1996
  • Status: Expired due to Term
First Claim
Patent Images

1. A contact hole, defined by a bottom and sidewalls, comprising titanium silicide on the bottom and a substantially continuous layer of titanium nitride on the sidewalls, wherein the titanium nitride is formed by:

  • physical vapor deposition of titanium into the contact hole;

    resputtering the titanium onto the sidewalls; and

    annealing the contact hole in a nitrogen-containing ambient.

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