Process simulation apparatus and method for selecting an optimum simulation model for a semiconductor manufacturing process

• US 5,787,269 A
• Filed: 09/19/1995
• Issued: 07/28/1998
• Est. Priority Date: 09/20/1994
• Status: Expired due to Fees

• Current Assignee: Ricoh Company Limited
• Original Assignee: Ricoh Company Limited
• Inventors: Hyodo, Toshihiro
• Primary Examiner(s): Teska, Kevin J.
• Assistant Examiner(s): Loppnow, Matthew Clay
• Application Number:
  US08/531,231
• Time in Patent Office: 1,043 Days
• Field of Search: 395/500, 364/578, 364/468, 364/149, 364/488, 364/489, 364/490, 364/491, 364/468.09
• US Class Current: 703/13
• CPC Class Codes: G06F 11/261 by simulating additional hardware, e.g. fault simulation
• CPC Class Codes: G06F 30/23 using finite element methods [FEM] or finite difference methods [FDM]

Abstract

A process simulation apparatus simulates a manufacturing process of a semiconductor device which manufacturing process comprising various processes including an ion implantation process and a diffusion process. Process sequence data which represents conditions of a two-dimensional simulation for each process is input to a memory unit. The memory unit stores the process sequence data and also stores condition information for various simulation models usable for each process. An optimum simulation model for each process is selected for performing a two-dimensional simulation for each process. The semiconductor device manufacturing process is simulated by a two-dimensional simulation method using the selected optimum simulation model.

Claims

1. A process simulation apparatus for simulating a manufacturing process of a semiconductor device which manufacturing process comprises various processes including an ion implantation process and a diffusion process, said process simulation apparatus comprising:

reading means for inputting process sequence data which represents conditions of a two-dimensional simulation for each process;

a memory unit storing said process sequence data input from said reading means and also storing condition information for various simulation models usable for each process;

model selecting means for selecting an optimum simulation model used for simulating each process so as to perform a two-dimensional simulation simulating each process, said model selecting means comparing said process sequence data and said condition information and selecting a simulation model which most accurately simulates an actual process based on the comparison; and

simulation means for simulating said semiconductor device manufacturing process by a two-dimensional simulation method using said optimum simulation model selected by the model selecting means to produce simulated results of said device manufacturing process.

2. The process simulation apparatus as claimed in claim 1, wherein said condition information includes conditions of temperature, process time and atmosphere for said diffusion process.

3. The process simulation apparatus as claimed in claim 1, wherein said condition information includes conditions of a direction of ion implantation for the ion implantation process.

4. The process simulation apparatus as claimed in claim 1, wherein said model selecting means comprises:

first selecting means for selecting a first simulation model for each process from among the various simulation models, said first simulation model being a most accurate simulation model;

second means for selecting a second simulation model from among the various simulation models, a processing time of said second simulation model being shorter than a processing time of said first simulation model; and

comparing means for comparing a result of a one-dimensional simulation performed on said first simulation model with a result of a one-dimensional simulation performed on said second simulation model so as to determine a most appropriate simulation model for each process so that a difference between a result of a simulation performed on said first simulation model and a result of a simulation performed on said most appropriate simulation model falls within a predetermined range.

5. The process simulation apparatus as claimed in claim 4, wherein said second selecting means repeatedly selects said second simulation model from among the simulation models so that a processing time of said most appropriate simulation model becomes the shortest.

6. The process simulation apparatus as claimed in claim 4, wherein said difference is related to distribution of density of impurities in the semiconductor device.

7. The process simulation apparatus as claimed in claim 4, wherein said difference is related to a configuration of the semiconductor device.

8. The process simulation apparatus as claimed in claim 4, further comprising mesh pattern producing means for producing a mesh pattern in accordance with a one-dimensional simulation using said most appropriate simulation model, intervals of the mesh pattern being set to appropriate values so as to maintain an accuracy of the simulation.

9. A process simulation method for simulating a manufacturing process of a semiconductor device which manufacturing process comprises various processes including an ion implantation process and a diffusion process, said process simulation method comprising the steps of:

inputting process sequence data which represents conditions of a two-dimensional simulation for each process into reading means;

storing said process sequence data input from said reading means and also storing condition information for various simulation models usable for each process in a memory unit;

comparing said process sequence data and said condition information;

selecting an optimum simulation model used for simulating each process for performing a two-dimensional simulation for simulating each process, said selecting step selecting a simulation model which most accurately simulates an actual process, based on the result of said comparison; and

simulating said semiconductor device manufacturing process by a two-dimensional simulation method using said optimum simulation model selected in the step c) to produce simulated results of said device manufacturing process.

10. The process simulation method as claimed in claim 9, wherein said condition information includes conditions of temperature, process time and atmosphere for said diffusion process.

11. The process simulation method as claimed in claim 9, wherein said condition information includes conditions of a direction of ion implantation for the ion implantation process.

12. The process simulation method as claimed in claim 9, wherein the step c) comprises the steps of:

c-1) selecting a first simulation model for each process from among the various simulation models, said first simulation model being a most accurate simulation model;

c-2) selecting a second simulation model from among the various simulation models, a processing time of said second simulation model being shorter than a processing time of said first simulation model; and

c-3) comparing a result of a one-dimensional simulation performed on said first simulation model with a result of a one-dimensional simulation performed on said second simulation model so as to determine a most appropriate simulation model for each process so that a difference between a result of a simulation performed on said first simulation model and a result of a simulation performed on said most appropriate simulation model falls within a predetermined range.

13. The process simulation method as claimed in claim 12, wherein the steps c-2) and c-3) are repeated so that a processing time of said most appropriate simulation model becomes the shortest.

14. The process simulation method as claimed in claim 12, wherein said difference is related to a distribution of density of impurities in the semiconductor device.

15. The process simulation method as claimed in claim 12, wherein said difference is related to a configuration of the semiconductor device.

16. The process simulation method as claimed in claim 12, further comprising the step of:

producing a mesh pattern in accordance with a one-dimensional simulation using said most appropriate simulation model, intervals of the mesh pattern being set to appropriate values so as to maintain an accuracy of the simulation.