Inductance reduced wire-bonding type semiconductor device

  • US 5,798,571 A
  • Filed: 07/02/1996
  • Issued: 08/25/1998
  • Est. Priority Date: 07/04/1995
  • Status: Expired due to Term
First Claim
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1. A wire-bonding type semiconductor device comprising:

  • a semiconductor chip;

    a plurality of power supply electrode pads formed on said semiconductor chip;

    a plurality of signal electrode pads formed on said semiconductor chip;

    a plurality of ground electrode pads formed on said semiconductor chip;

    a plurality of first thin metal wires for electrically connecting said power supply electrode pads to associated internal terminals of a package;

    a plurality of second thin metal wires for electrically connecting said signal electrode pads to associated internal terminals of a package; and

    a plurality of third thin metal wires for electrically connecting said ground electrode pads to associated internal terminals of a package;

    said power supply electrode pads, said signal electrode pads and said ground electrode pads being arranged in sets on said semiconductor chip so that each set includes at least one signal electrode pad being always disposed intermediate between a power supply electrode pad and a ground electrode pad, and the distance between said sets is larger than the distance between the power supply electrode pads, signal electrode pads, and ground electrode pads in each set, andsaid first, second and third thin metal wires are designed so that a first thin metal wire, a third thin metal wire and at least one second thin metal wire located intermediate between said first and third thin metal wires are disposed substantially in parallel with one another and have substantially the same length.

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