Dual-band multi-level microbridge detector

• US 5,811,815 A
• Filed: 11/15/1996
• Issued: 09/22/1998
• Est. Priority Date: 11/15/1995
• Status: Expired due to Term

• Current Assignee: Lockheed Martin IR Imaging Systems, Inc. (Martin Marietta Corporation)
• Original Assignee: Lockheed Martin IR Imaging Systems, Inc. (Martin Marietta Corporation)
• Inventors: Marshall, Charles M., Blackwell, Richard
• Primary Examiner(s): Glick, Edward J.
• Application Number:
  US08/751,516
• Time in Patent Office: 676 Days
• Field of Search: 250/370.06, 250/338.4, 250/332, 250/370.08
• US Class Current: 250/370.06
• CPC Class Codes: G01J 5/20 using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
• CPC Class Codes: H01L 25/042 the devices being arranged next to each other solar cells H01L31/042
• CPC Class Codes: H01L 27/1465 of the hybrid type
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 31/09 Devices sensitive to infrared, visible or ultraviolet radiation H01L31/101 takes precedence
• CPC Class Codes: H10N 19/00 Integrated devices, or assemblies of multiple devices, comprising at least one thermoelectric or thermomagnetic element covered by groups H10N10/00 - H10N15/00

Abstract

A dual-band detector that absorbs incident radiation in a first range of wavelengths and that absorbs incident radiation in a second range of wavelengths. The dual-band detector includes a semiconductor substrate and a first microbridge detector level disposed above the semiconductor substrate. The first microbridge detector level includes an active area that absorbs incident radiation in one of the first range of wavelengths and the second range of wavelengths. In one embodiment, the semiconductor substrate includes a detector that detects incident radiation in the other of the first and second range of wavelengths. In another embodiment, the dual-band microbridge detector also includes a second microbridge detector level. The second microbridge detector level also includes an active area that absorbs incident radiation in an alternative one of the first range of wavelengths and the second range or wavelengths. With this apparatus, the dual-band detector can operate in a first range of wavelengths and also in a second range of wavelengths. In addition, this apparatus can be fabricated using existing processing techniques.

Claims

1. A dual-band detector, comprising:

a semiconductor substrate including a detector device that absorbs incident radiation in a first and of wavelengths of incident radiation; and

a microbridge detector level including a sensing element that absorbs incident radiation in second band of wavelengths of the incident radiation; and

means for coupling a detected signal, in response to the absorbed incident radiation in the second band of wavelengths, from the sensing element to the semiconductor substrate.

2. The dual-band detector of claim 1, wherein the microbridge detector level is disposed above the detector device and is substantially transmissive to electromagnetic radiation in the first band of wavelengths.

3. The dual-band detector of claim 1, wherein the microbridge detector level is disposed adjacent the detector device.

4. The dual-band detector of claim 3, further comprising a reflective layer disposed on the semiconductor substrate below the microbridge detector level, wherein a distance between the microbridge detector level and the reflective layer is selected so as to enhance absorption of the incident radiation in the second band of wavelengths.

5. The dual-band detector of claim 1, wherein the means for coupling includes downwardly extending leg portions which are a continuation of the microbridge detector level and which support the microbridge detector level above the semiconductor substrate so that a thermal isolation gap exists between the microbridge detector level and the semiconductor substrate;

and

electrically conductive paths included within said downwardly extending leg portions connecting the sensing element to the semiconductor substrate.

6. The dual-band detector of claim 1, wherein the means for coupling comprises etched contacts which vertically extend from the microbridge detector level to the semiconductor substrate and which support the microbridge detector level above the semiconductor substrate so that a thermal isolation gap exists between the microbridge detector level and the semiconductor substrate.

7. The dual-band detector of claims 2 or 3, wherein the sensing element includes a thin film layer of temperature responsive resistive material.

8. The dual-band detector of claim 6, wherein the sensing element includes a layer of absorptive material which has peak absorption characteristics in the second band of wavelengths.

9. The dual-band detector of claim 1, wherein the detector device is a charge coupled device sensor disposed in the semiconductor substrate.

10. The dual-band detector of claim 1, wherein the semiconductor substrate further comprises:

means for pulsing the sensing element; and

means for sampling a signal provided by each of the detector device and the sensing element in response to the incident energy in the corresponding first band of wavelengths and the second band of wavelengths.

11. The dual-band detector of claim 1, wherein the semiconductor substrate further comprises an integrated circuit disposed within the semiconductor substrate, that pulses the sensing element and that samples a signal provided by each of the detector device and the sensing element, in response to the incident radiation in each of the respective first band of wavelengths and the second band of wavelengths.

12. The dual-band detector of claim 1, wherein the first band of wavelengths is in a range between 0.4 and 0.8 microns.

13. The dual-band detector of claim 1, wherein the second band of wavelengths is in a range between and 8 and 14 microns.

14. A dual-band detector, comprising:

a semiconductor substrate;

a first microbridge detector disposed above the semiconductor substrate, the first microbridge detector including a first sensing element that absorbs incident radiation in a first range of wavelengths of incident radiation;

a second microbridge detector disposed above the semiconductor substrate, the second microbridge detector including a second sensing element that absorbs incident energy in a second range of wavelengths of the incident radiation;

a first means for coupling a first detected signal from the first sensing element, in response to the incident radiation in the first range of wavelengths, to the semiconductor substrate; and

a second means for coupling a second detected signal from the second sensing element, in response to incident radiation in the second range of wavelengths, to the semiconductor substrate.

15. The dual-band detector of claim 14, wherein the second microbridge detector including the second sensing element is substantially transmissive to incident energy outside the second range of wavelengths, wherein the first microbridge detector including the first sensing element is substantially transmissive to incident radiation outside the first range of wavelengths, and wherein the second microbridge detector including the second sensing element is disposed above the first microbridge detector including the first sensing element.

16. The dual-band detector as claimed in claim 15, further comprising a reflective layer disposed on the first microbridge detector level below the second microbridge detector level so that a distance between the second microbridge detector level and the reflective layer enhances absorption of the incident radiation in the second range of wavelengths by the second sensing element.

17. The dual-band detector as claimed in claim 14, wherein the first microbridge detector including the first sensing element is disposed adjacent the second microbridge detector including the second sensing element.

18. The dual-band detector of claim 14, wherein the first sensing element includes a thin film layer of temperature responsive resistive material.

19. The dual-band detector of claim 18, wherein the first sensing element includes a layer of absorptive material which has peak absorption characteristics in the first range of wavelengths.

20. The dual-band detector of claim 18, wherein the second sensing element includes a thin film layer of temperature responsive resistive material.

21. The dual-band detector of claim 20, wherein the second sensing element includes a layer of absorptive material which has peak absorption characteristics in the second range of wavelengths.

22. The dual-band detector of claim 14, further comprising a reflective layer disposed on the semiconductor substrate below the first microbridge detector level and the second microbridge detector level, wherein a first distance between the first microbridge detector level and the reflective layer enhances absorption of the incident radiation in the first range of wavelengths and wherein a second distance between the second microbridge detector level and the reflective layer enhances absorption of the incident radiation in the second range of wavelengths.

23. The dual-band, detector of claim 14, wherein the first range of wavelengths is in a range of 3-5 microns.

24. The dual-band, detector of claim 14, wherein the second range of wavelengths is in a range of 8-14 microns.

25. The dual-band, detector of claim 14, wherein the semiconductor substrate includes means for pulsing each of the first sensing element and the second sensing element.

26. The dual-band detector of claim 25, wherein the semiconductor substrate further includes a respective means for sampling the first detected signal from the first sensing element and for sampling the second detected signal from the second sensing element, in response to the incident energy in the first range of wavelengths and the second range of wavelengths.

27. The dual-band detector of claim 14, wherein the semiconductor substrate includes a readout integrated circuit disposed within the semiconductor substrate that pulses each of the first sensing element and the second sensing element and that samples the first detected signal and the second detected signal, provided by each of the first sensing element and the second sensing element, in response to the incident energy in the corresponding first range of wavelengths and the second range of wavelengths.

28. The dual-band detector of claim 14, wherein the first means for coupling includes first downwardly extending leg portions which are a continuation of the first microbridge detector level and which support the first microbridge detector level above the semiconductor substrate so that a thermal isolation gap exists between the first microbridge detector level and the semiconductor substrate;

and

first electrically conductive paths included within the first downwardly extending leg portions connecting the first sensing element to the semiconductor substrate.

29. The dual-band detector of claim 28, wherein the second means for coupling includes second downwardly extending leg portions which are a continuation of the second microbridge detector level and which support the second microbridge detector level above the semiconductor substrate so that a thermal isolation gap exists between the second microbridge detector level and the semiconductor substrate;

and

second electrically conductive paths included within said second downwardly extending leg portions connecting the second sensing element to the semiconductor substrate.

30. The dual-band detector of claim 14, wherein the first means for coupling comprises etched contacts which vertically extend from the first microbridge detector level down to the semiconductor substrate.

31. The dual-band detector of claim 30, wherein the second means for coupling comprises etched contacts which vertically extend from the second microbridge detector level down to the semiconductor substrate.