Method and device for generating a laser beam

• US 5,818,864 A
• Filed: 09/23/1996
• Issued: 10/06/1998
• Est. Priority Date: 02/02/1995
• Status: Expired due to Fees

• Current Assignee: Urenco Nederland BV (Urenco Limited)
• Original Assignee: Urenco Nederland BV (Urenco Limited)
• Inventors: van Goor, Frederik Albert, van Heel, Hubertus Johannes
• Primary Examiner(s): Scott, Jr., Leon
• Application Number:
  US08/716,307
• Time in Patent Office: 743 Days
• Field of Search: 372/56, 372/37, 372/69, 372/38, 372/57, 372/86, 372/103, 372/60, 372/2, 372/25, 372/82
• US Class Current: 372/82
• CPC Class Codes: H01S 3/09713 with auxiliary ionisation, e.g. double discharge excitation
• CPC Class Codes: H01S 3/104 in gas lasers
• CPC Class Codes: H01S 3/225 comprising an excimer or exciplex

Abstract

Described are a method for generating a laser beam and a laser device for practising the method. In a first step gas is ionised by means of X-rays. In a second step the electron density is increased by means of a pre-discharge. In a third step the main discharge takes place. Between the second and third steps, an electron redistribution occurs. According to the invention, the electron redistribution rate and/or the time delay between the pre-discharge and the main discharge are adjustable and controllable in relation to each other, for achieving a particular desired beam profile, such as a uniform profile. Because that delay is preferably set by varying one or more process parameters, an improtant advantage is achieved in that it is possible with one and the same laser device to modify the beam profile in a simple and flexible manner even during the operation of the laser device.

Claims

1. A method for generating a laser beam having a defined beam axis, the method comprising steps of:

a) applying, at a first time, a first voltage pulse to an at least partly ionized gas for effecting an electron multiplication;

b) applying, at a second time, a second voltage pulse to the at least partly ionized gas for effecting a gas discharge;

c) setting a time difference (Δ

t) between the first time and the second time and setting an electron redistributed rate occurring between the first and second times such that a relatively flat profile of the laser beam in a direction perpendicular to the beam axis and perpendicular to an electric field generated by the first and second voltage pulses is achieved.

2. A method according to claim 1, wherein said time difference (Δ

t) is set in the range of 30-400 ns.

3. A method according to claim 2, wherein said laser beam is generated with a repetition frequency which is greater than 1 kHz, and wherein said steps of setting the time difference and electron redistribution rate are done in relation to a width of a pre-ionization of the gas.

4. A method according to claim 1, wherein said step of setting said time difference (Δ

t) is effected by using a pulse source arranged for delivering said first and second voltage pulses with adjustable time delay.

5. A method according to claim 4, wherein the step of applying the first voltage pulse includes a sub-step of generating the first voltage pulse by means of a first pulse forming network charged to a first predetermined voltage value, and

wherein the step of applying the second voltage pulse includes a sub-step of generating the second voltage pulse by means of a second pulse forming network charged to a second predetermined voltage value, the method further comprising a step of:

d) separating the first and second pulse forming networks from each other by means of a magnetically saturable inductor,

wherein said step of setting said time difference (Δ

t) includes a sub-step of varying the second predetermined voltage value of the second pulse forming network.

6. A method according to claim 5, wherein said second predetermined voltage value of the second pulse forming network is chosen in the range of 7-18 kV.

7. A method according to claim 5, wherein said second predetermined voltage value of the second pulse forming network is chosen in the range of 12-15 kV.

8. A method according to claim 5, wherein said second predetermined voltage value of the second pulse forming network is chosen to be about 13.5 kV.

9. A method according to claim 4, wherein said second predetermined voltage value of the second pulse forming network is set by varying a primary voltage value of a supply source for the first and second pulse forming networks.

10. A method according to claim 4, wherein the step of applying the first voltage pulse includes a sub-step of generating the first voltage pulse by means of a first pulse forming network charged to a first predetermined voltage and the step of applying the second voltage pulse includes a sub-step of generating the second voltage pulse by means of a second pulse forming network charged to a second predetermined voltage, the method further comprising a step of:

d) separating the first and second pulse forming networks from each other by means of a magnetically saturable inductor,

wherein said step of setting said time difference (Δ

t) includes a sub-step of choosing a suitable amount of the magnetically saturable material in the magnetically saturable inductor.

11. A method according to claim 1, wherein said gas comprises a mixture of a first active component, a halogen donor, and a carrier gas, and wherein said step of setting said electron redistribution rate includes a sub-step of varying a partial pressure of at least the halogen donor.

12. A method according to claim 11, wherein the sub-step of varying a partial pressure of the halogen donor is performed such that the partial pressure is in the range of 0.1 to 20 mbar.

13. A method according to claim 11, wherein the sub-step of varying the partial pressure of the halogen donor includes steps of bringing the gas mixture in heat exchanging contact with a condensation element and setting a temperature of the condensation element such that a vapor pressure of the halogen donor at the temperature set corresponds with the partial pressure of the halogen donor.

14. A method according to claim 13, wherein the temperature of the condensation element is set in the range of 110-140K.

15. A method according to claim 13, wherein the temperature of the condensation element is set in the range of 110-125K.

16. A method according to claim 13, wherein the temperature of the condensation element is set in the range of about 116-117K.

17. A method according to claim 11, wherein the sub-step of varying a partial pressure of the halogen donor is performed such that the partial pressure is in the range of 0.5 to 1.3 mbar.

18. A method according to claim 11, wherein the sub-step of varying a partial pressure of the halogen donor is performed such that the partial pressure is about 0.8 mbar.

19. A method according to claim 1, wherein the time difference is set such that a uniform top hat laser beam profile is achieved.

20. A method according to claim 1, wherein said time difference (Δ

t) is set in the range of 50-100 ns.

21. A method according to claim 1, wherein said time difference (Δ

t) is set to about 75 ns.

22. A laser device for generating a laser beam having a defined beam axis, the laser device comprising:

a) means for generating a first voltage pulse for effecting an electron multiplication;

b) means for generating a second voltage pulse for effecting a gas discharge; and

c) means for setting the time delay Δ

t between the first voltage pulse and the second voltage pulse wherein the laser device has a repetition frequency considerably greater than 1 kHz and wherein the laser beam has a relatively flat profile in a direction perpendicular to its beam axis and perpendicular to an electric field generated by the first voltage pulse and a second electric field generated by a second voltage pulse.

23. A laser device according to claim 22, wherein the means for generating the first and second voltage pulses are a pulse source arranged for delivering the first and second voltage pulses with adjustable time delay.

24. A laser device according to claim 23, wherein the pulse source includes

i) a first pulse forming network for generating the first voltage pulse,

ii) a second pulse forming network for generating the second voltage pulse,

iii) a magnetically saturable inductor for separating the first and second pulse forming networks, and

iv) means for varying the voltage value of the second pulse forming network.

25. A laser device according to claim 24, further comprising

d) a supply source for the first and second pulse forming networks;

and

e) means for varying a primary voltage of the supply source.

26. A laser device according to claim 22 further comprising:

d) a source for ionizing radiation; and

e) a radiation transparent window, through which the ionizing radiation may travel, wherein a width of the window is variable.

27. A laser device according to claim 22 further comprising:

d) a source for ionizing radiation; and

e) a radiation transparent window, through which the ionizing radiation may travel, wherein a width of the window is less than 2 cm.

28. A laser device according to claim 22 further comprising a source for ionizing radiation and a radiation transparent window wherein a width of the window is less than about 0.5 cm.

29. A laser device comprising:

a) means for applying, at a first time, a first voltage pulse to an at least partly ionized gas for effecting an electron multiplication and for applying, at a second time, a second voltage pulse for effecting a gas discharge; and

b) means for setting electron redistribution rate between the first and second times such that an emitted laser beam has a relatively flat profile in a direction perpendicular to an axis of the laser beam and perpendicular to an electric field generated by the first and second voltage pulses.

30. A laser device according to claim 29, wherein said gas comprises a mixture of a first active component, a halogen donor, and a carrier gas, the laser device further comprising:

c) elements for setting the partial pressure of at least the halogen donor.

31. A laser device according to claim 30, further comprising:

d) a purifier; and

e) means for setting a temperature of the purifier.

32. A laser device for generating a laser beam, the laser device comprising:

a) means for applying, to an at least partly ionized gas, a first voltage pulse at a first time for effecting an electron multiplication; and

b) means for thereafter applying a second voltage pulse at a second time for effecting a gas discharge, wherein a time difference (Δ

t) between the first time and the second time and an electron redistribution rate occurring between the first and second times is such that the laser beam has a top hat profile in a direction perpendicular to its beam axis and perpendicular to an electric field generated by the first and second voltage pulses.

33. A laser device according to claim 32, wherein said time difference (Δ

t) is in the range of 30-400 ns.

34. A laser device according to claim 32, wherein the means for applying and the means for thereafter applying include a pulse source arranged for delivering the first and second voltage pulses with a predetermined time delay between them.

35. A laser device according to claim 34, wherein the pulse source includes

i) a first pulse forming network for generating the first voltage pulse,

ii) a second pulse forming network for generating the second voltage pulse, and

iii) a magnetically saturable inductor for separating the first and second pulse forming networks, wherein a value of the second voltage pulse forming network is in the range of 7-18 kV.

36. A laser device according to claim 34, wherein the pulse source includes a first pulse forming network for generating the first voltage pulse, a second pulse forming network for generating the second voltage pulse, and a magnetically saturable inductor for separating the first and second pulse forming networks, wherein a value of the second voltage pulse forming network is in the range of 12-15 kV.

37. A laser device according to claim 34, wherein the pulse source includes a first pulse forming network for generating the first voltage pulse, a second pulse forming network for generating the second voltage pulse, and a magnetically saturable inductor for separating the first and second pulse forming networks, wherein a value of the second voltage pulse forming network is about 13.5 kV.

38. A laser device according to claim 32, wherein said gas comprises a mixture of a first active component, a halogen donor, and a carrier gas, and wherein the partial pressure of the halogen donor is in the range of 0.1 to 20 mbar.

39. A laser device according to claim 38 further comprising:

c) a purifier, the temperature of which is in the range of 110-140K.

40. A laser device according to claim 38 further comprising a purifier, the temperature of which is in the range of 110-125K.

41. A laser device according to claim 38 further comprising a purifier, the temperature of which is in the range of about 116-117K.

42. A laser device according to claim 32, wherein the laser beam has a uniform top hat profile.

43. A laser device according to claim 32, wherein said time difference (Δ

t) is in the range of 50-100 ns.

44. A laser device according to claim 32, wherein said time difference (Δ

t) is about 75 ns.

45. A laser device according to claim 32, wherein said gas comprises a mixture of a first active component such as Xe, a halogen donor such as HCl, and a carrier gas such as Ne, and wherein the partial pressure of the halogen donor is about 0.8 mbar.