Optical proximity correction method for intermediate-pitch features using sub-resolution scattering bars on a mask

• US 5,821,014 A
• Filed: 02/28/1997
• Issued: 10/13/1998
• Est. Priority Date: 02/28/1997
• Status: Expired due to Term

• Current Assignee: ASML Netherlands BV (ASML Holding NV)
• Original Assignee: Microunity Systems Engineering Incorporated
• Inventors: Wampler, Kurt, Laidig, Thomas L., Chen, Jang Fung
• Primary Examiner(s): Young, Christopher G.
• Application Number:
  US08/808,587
• Time in Patent Office: 592 Days
• Field of Search: 430/5, 430/30
• US Class Current: 430/5
• CPC Class Codes: G03F 1/36 Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
• CPC Class Codes: G03F 7/70125 Use of illumination settings tailored to particular mask patterns details of setting means G03F7/70091
• CPC Class Codes: G03F 7/70441 Optical proximity correction [OPC]

Abstract

A method for providing scattering bars for optical proximity effect correction on a mask used in a lithographic process. Scattering bar spacing and characteristics are adjusted and varied along with primary feature edge location in order to control CD'"'"'s of features that are spaced a distance greater than the minimum pitch of a lithographic process but less than a nominal distance for two feature edges having independent scattering bars.

Claims

1. A method of providing non-resolvable correction features on a mask for correcting for proximity effects, said mask including at least two feature edges, said correction features having an associated nominal width, associated nominal spacing from a given mask feature edge, and an associated nominal spacing between adjacent correction feature edges, said method comprising the steps of:

adding a single non-resolvable correction feature between two adjacent mask edges on a mask, said correction feature having an edge adjacent to each of said two adjacent mask edges, wherein said adjacent correction feature edges are spaced a distance from said two adjacent edges that is less than said nominal spacing but greater than a given minimum distance;

adding two non-resolvable correction features between two adjacent edges on a mask wherein said correction feature is spaced a distance from each of said two adjacent edges that is less than said nominal spacing but greater than a given minimum distance.

2. The method described in claim 1 wherein said mask is used in a photolithographic process having an exposure source having an associated wavelength and wherein said minimum distance is proportional to said wavelength.

3. The method described in claim 2 wherein said given minimum distance is 3/4 said wavelength.

4. The method described in claim 1 wherein said single correction feature has an associated width that is less than said nominal width.

5. The method described in claim 4 wherein said associated width of said single correction feature is 2/3 of said nominal width.

6. The method described in claim 1 wherein said associated width of said single correction feature is greater than said nominal width.

7. The method described in claim 6 wherein said associated width of said single correction feature is 1.5 of said nominal width.

8. A method of applying at least one correction feature having associated physical characteristics to correct for proximity effects of two adjacent primary features spaced apart a given distance in a lithographic process using an exposure tool having an associated wavelength and having an associated resolution limit which is dependent on processing parameters of said lithographic process, said primary features each having an associated edge adjacent to said at least one correction feature and said each adjacent edge having an original placement, said method comprising the steps of:

placing said at least one correction feature between said two adjacent features;

adjusting at least one of said associated physical characteristics of said at least one correction feature and said original placement of at least one of said adjacent edges so that the separation space between said each adjacent edge and said at least one correction feature is a distance that is greater than a minimum distance and less than a given nominal distance which is in the range of said resolution limit of said lithographic process, wherein said minimum distance is less than said wavelength.

9. The method described in claim 8 wherein said physical characteristic is the width of said at least one correction feature.

10. The method as described in claim 9 wherein said step of adjusting comprises adjusting said width of said at least one correction feature to be a dimension that is less than a given nominal width which is in the range of λ

/3.

11. The method as described in claim 9 wherein said step of adjusting comprises adjusting said width of said at least one correction feature to be a dimension that is greater than a given nominal width which is in the range of λ

/3 and less than a given maximum unresolvable width.

12. The method as described in claim 9 wherein said step of adjusting comprises forming said at least one correction feature as a dashed feature.

13. The method as described in claim 9 or 8 wherein said original placement of said at least one adjacent edge is moved towards said at least one correction feature.

14. The method as described in claim 9 or 8 wherein said original placement of said at least one adjacent edge is moved away from said at least one correction feature.

15. The method as described in claim 12 wherein said step of forming said at least one dashed feature comprises further controlling an effective width of said at least one dashed feature by adjusting its dash length to dash separation ratio and its dash pitch.

16. A method using at least one correction feature having an associated width to correct for proximity effects of two adjacent primary features on a mask in a lithographic process using an exposure tool having an associated wavelength (λ

) and having an associated maximum unresolvable width which is dependent on processing parameters of said lithographic process, said primary features being spaced apart a given distance and each having an associated edge adjacent to said at least one correction feature and said each adjacent edge having an original placement, said method comprising the steps of;

determining a number of correction features to be placed between said two primary features so that the separation space between each of said adjacent edges of said primary features and an adjacent one of said at least one correction feature is a distance that is greater than a minimum distance and less than a given nominal distance which is in the range of said resolution limit of said lithographic process, wherein said minimum distance is less than said wavelength;

placing said number of correction features between said two adjacent features.

17. The method as described in claim 16 wherein said a single correction feature is placed between said two primary features.

18. The method as described in claim 16 wherein said two correction features are placed between said two primary features.

19. The method as described in claim 17 wherein said given distance (d) is in the range of 5λ

/3≦

d<

7λ

/3.

20. The method as described in claim 18 wherein said given distance (d) is in the range of 7λ

/3<

d<

10λ

/3.

21. The method as described in claims 19 or 20 wherein said associated width is a given nominal width which is in the range of said maximum unresolvable width.

22. The method as described in claims 19 or 20 wherein said width is less than a given nominal width which is in the range of λ

/3.

23. The method as described in claim 19 or 20 wherein said at least one correction feature is a dashed line and said associated width is a given nominal width which is in the range of said maximum unresolvable width.

24. The method as described in claim 17 wherein said given distance (d) is in the range of 5λ

/3≦

d<

7λ

/3 and wherein said width is less than said maximum unresolvable width and greater than a given nominal width which is in the range of λ

/3.

25. A mask produced by said method of claims 8 or 16.