High-voltage CMOS level shifter

• US 5,821,800 A
• Filed: 02/11/1997
• Issued: 10/13/1998
• Est. Priority Date: 02/11/1997
• Status: Expired due to Term

• Current Assignee: Cypress Semiconductor Corporation (Infineon Technologies AG)
• Original Assignee: Advanced Micro Devices, Inc.
• Inventors: Le, Binh Quang, Kawamura, Shoichi, Chen, Pau-Ling, Hollmer, Shane
• Primary Examiner(s): Callahan, Tim
• Assistant Examiner(s): LE, DINH THANH
• Application Number:
  US08/799,074
• Time in Patent Office: 609 Days
• Field of Search: 326/62, 326/63, 326/68, 326/80, 326/81, 327/333, 327/77, 327/530, 327/437, 327/306
• US Class Current: 327/333
• CPC Class Codes: H03K 17/102 in field-effect transistor switches
• CPC Class Codes: H03K 3/356113 using additional transistors in the input circuit

Abstract

A high-voltage level shifter includes one or more complementary NMOS/PMOS series intermediate transistor pairs to divide the high-voltage supply range into two or more sub-ranges. The level shifter has a differential structure with complementary NMOS input transistors. Cross-coupled PMOS output transistors provide complementary outputs. The complementary NMOS/PMOS series intermediate transistor pairs separate the NMOS input transistor drains from the PMOS output transistor drains. In order to divide the high voltage range into h subranges, h-1 complementary NMOS/PMOS series intermediate transistor pairs are used each being biased by monotonically increasing fixed intermediate voltages. In a shared-bias embodiment, each complementary NMOS/PMOS series intermediate transistor pair is biased by a single corresponding intermediate voltage. In a split-bias embodiment, each complementary NMOS/PMOS series intermediate transistor pair is biased by a corresponding NMOS bias voltage and a corresponding PMOS bias voltage, in which the NMOS bias voltage is higher than the PMOS bias voltage by the sum or the NMOS threshold voltage and the PMOS threshold voltage. In another aspect, the N-wells of the PMOS transistors are tied to an upwardly vertically adjacent intermediate voltage in the shared-bias embodiments, and are tied to an upwardly vertically adjacent NMOS bias voltage in the split-bias embodiments. In a twin tub embodiment for very high voltage applications, the P-wells of the NMOS transistors are tied to a downwardly vertically adjacent intermediate voltage in the shared-bias embodiments, and are tied to a downwardly vertically adjacent PMOS bias voltage for the split-bias embodiments.

Claims

1. A high-voltage level shifter, comprising:

an NMOS non-inverted input transistor having a source, drain, and gate;

an NMOS inverted input transistor having a source, drain, and gate;

a first NMOS non-inverted intermediate transistor having a source, drain, and gate;

a first PMOS non-inverted intermediate transistor having a source, drain, and gate;

a first NMOS inverted intermediate transistor having a source, drain, and gate;

a first PMOS inverted intermediate transistor having a source, drain, and gate;

wherein the NMOS non-inverted input transistor drain is coupled to the first NMOS non-inverted intermediate transistor source;

wherein the first NMOS non-inverted intermediate transistor drain is coupled to the first PMOS non-inverted intermediate transistor drain;

wherein the NMOS inverted input transistor drain is coupled to the first NMOS inverted intermediate transistor source;

wherein the first NMOS inverted intermediate transistor drain is coupled to the first PMOS inverted intermediate transistor drain;

wherein the first NMOS non-inverted intermediate transistor gate, the first PMOS non-inverted intermediate transistor gate, the first NMOS inverted intermediate transistor gate, and the first PMOS inverted intermediate transistor gate are coupled to a first intermediate voltage that is lower than a high positive supply voltage;

a second NMOS non-inverted intermediate transistor having a source, drain, and gate;

a second PMOS non-inverted intermediate transistor having a source, drain, and gate;

a second NMOS inverted intermediate transistor having a source, drain, and gate; and

a second PMOS inverted intermediate transistor having a source, drain, and gate;

wherein the second NMOS non-inverted intermediate transistor source is coupled to the first PMOS non-inverted intermediate transistor source;

wherein the second NMOS inverted intermediate transistor source is coupled to the first PMOS inverted intermediate transistor source;

wherein the second PMOS non-inverted intermediate transistor drain is coupled to the second NMOS non-inverted transistor drain;

wherein the second PMOS inverted intermediate transistor drain is coupled to the second NMOS inverted transistor drain; and

wherein the second NMOS non-inverted intermediate transistor gate, the second PMOS non-inverted intermediate transistor gate, the second NMOS inverted intermediate transistor gate, and the second PMOS inverted intermediate transistor gate are coupled to a second intermediate voltage that is higher than the first intermediate voltage and lower than the high positive supply voltage.

2. A high-voltage level shifter as in claim 1, further comprising:

a PMOS non-inverted output transistor having a source, drain, and gate; and

a PMOS inverted output transistor having a source, drain, and gate;

wherein the PMOS non-inverted output transistor drain is coupled to the second PMOS non-inverted intermediate transistor source;

wherein the PMOS inverted output transistor drain is coupled to the second PMOS inverted intermediate transistor source.

3. A high-voltage level shifter as in claim 2,

wherein the second intermediate voltage is coupled to a first PMOS non-inverted intermediate transistor'"'"'s body and a first PMOS inverted intermediate transistor'"'"'s body.

4. A high-voltage level shifter, comprising:

an NMOS non-inverted input transistor having a source, drain, and gate;

an NMOS inverted input transistor having a source, drain, and gate;

a first NMOS non-inverted intermediate transistor having a source, drain, and gate;

a first PMOS non-inverted intermediate transistor having a source, drain, and gate;

a first NMOS inverted intermediate transistor having a source, drain, and gate;

a first PMOS inverted intermediate transistor having a source, drain, and gate;

wherein the NMOS non-inverted input transistor drain is coupled to the first NMOS non-inverted intermediate transistor source;

wherein the first NMOS non-inverted intermediate transistor drain is coupled to the first PMOS non-inverted intermediate transistor drain;

wherein the NMOS inverted input transistor drain is coupled to the first NMOS inverted intermediate transistor source;

wherein the first NMOS inverted intermediate transistor drain is coupled to the first PMOS inverted intermediate transistor drain;

wherein the first NMOS non-inverted intermediate transistor gate and the first NMOS inverted intermediate transistor gate are coupled to a first n-bias intermediate voltage;

wherein the first PMOS non-inverted intermediate transistor gate and the first PMOS inverted intermediate transistor gate are coupled to a first p-bias intermediate voltage;

wherein the first n-bias intermediate voltage is higher than the first p-bias intermediate voltage;

wherein both the first n-bias and the first p-bias intermediate voltages are lower than a high positive supply voltage;

a second NMOS non-inverted intermediate transistor having a source, drain, and gate;

a second PMOS non-inverted intermediate transistor having a source, drain, and gate;

a second NMOS inverted intermediate transistor having a source, drain, and gate; and

a second PMOS inverted intermediate transistor having a source, drain, and gate;

wherein the second NMOS non-inverted intermediate transistor source is coupled to the first PMOS non-inverted intermediate transistor source;

wherein the second NMOS inverted intermediate transistor source is coupled to the first PMOS inverted intermediate transistor source;

wherein the second PMOS non-inverted intermediate transistor drain is coupled to the second NMOS non-inverted transistor drain;

wherein the second PMOS inverted intermediate transistor drain is coupled to the second NMOS inverted transistor drain;

wherein the second NMOS non-inverted intermediate transistor gate and the second NMOS inverted intermediate transistor gate are coupled to a second n-bias intermediate voltage;

wherein the second PMOS non-inverted intermediate transistor gate and the second PMOS inverted intermediate transistor gate are coupled to a second p-bias intermediate voltage;

wherein the second n-bias intermediate voltage is higher than the second p-bias intermediate voltage;

wherein both the second n-bias intermediate voltage and the second p-bias intermediate voltage are higher than the first n-bias intermediate voltage and first p-bias intermediate voltage; and

wherein both the second n-bias intermediate voltage and the second p-bias intermediate voltage are lower than the high positive supply voltage.

5. A high-voltage level shifter as in claim 4, further comprising:

a PMOS non-inverted output transistor having a source, drain, and gate; and

a PMOS inverted output transistor having a source, drain, and gate;

wherein the PMOS non-inverted output transistor drain is coupled to the second PMOS non-inverted intermediate transistor source;

wherein the PMOS inverted output transistor drain is coupled to the second PMOS inverted intermediate transistor source.

6. A high-voltage level shifter as in claim 5,

wherein the second n-bias intermediate voltage is coupled to a first PMOS non-inverted intermediate transistor'"'"'s body and a first PMOS inverted intermediate transistor'"'"'s body.

7. A high-voltage level shifter, comprising:

an NMOS non-inverted input transistor having a source, drain, and gate;

an NMOS inverted input transistor having a source, drain, and gate;

a plurality of complementary NMOS/PMOS series intermediate transistor pairs connected in series, comprising;

an upper complementary NMOS/PMOS series intermediate transistor pair having an upper non-inverted NMOS gate, an upper non-inverted PMOS gate, an upper inverted NMOS gate, an upper inverted PMOS gate, a PMOS inverted intermediate source, and a PMOS non-inverted intermediate source, wherein the upper non-inverted NMOS gate and the upper inverted NMOS gate are coupled to an upper NMOS bias voltage;

wherein the non-inverted PMOS gate and the inverted PMOS gate are coupled to an upper PMOS bias voltage; and

a lower complementary NMOS/PMOS series intermediate transistor pair having a lower non-inverted NMOS gate, a lower non-inverted PMOS gate, a lower inverted NMOS gate, a lower inverted PMOS gate, an NMOS inverted intermediate source, and an NMOS non-inverted intermediate source, wherein the lower non-inverted NMOS gate and the lower inverted NMOS gate are coupled to a lower NMOS bias voltage;

wherein the non-inverted PMOS gate and the inverted PMOS gate are coupled to a lower PMOS bias voltage;

wherein the NMOS non-inverted input transistor drain is coupled to the lower NMOS non-inverted intermediate source;

wherein the NMOS inverted input transistor drain is coupled to the lower NMOS inverted intermediate source.

8. A high-voltage level shifter as in claim 7, further comprising:

a PMOS non-inverted output transistor having a source, drain, and gate; and

a PMOS inverted output transistor having a source, drain, and gate;

wherein the PMOS non-inverted output transistor drain is coupled to the PMOS non-inverted intermediate source;

wherein the PMOS inverted output transistor drain is coupled to the PMOS inverted intermediate source;

wherein the PMOS non-inverted output transistor drain is coupled to the PMOS inverted output transistor gate; and

wherein the PMOS inverted output transistor drain is coupled to the PMOS non-inverted output transistor gate.

9. A high-voltage level shifter as in claim 8,

wherein the PMOS non-inverted output transistor source and the PMOS inverted output transistor source are coupled to the high positive supply voltage;

and

wherein the NMOS non-inverted input transistor source and the NMOS inverted input transistor source are coupled to a ground supply voltage.

10. A high-voltage level shifter as in claim 8,

wherein a non-inverted input is coupled to the NMOS non-inverted input transistor gate;

wherein an inverted input is coupled to the NMOS inverted input transistor gate;

wherein a non-inverted output is coupled to the non-inverted output transistor drain; and

wherein an inverted output is coupled to the inverted output transistor drain.

11. A high-voltage level shifter as in claim 7,

wherein an upper intermediate voltage is coupled to the upper NMOS bias voltage and the upper PMOS bias voltage;

and

wherein a lower intermediate voltage is coupled to the lower NMOS bias voltage and the lower PMOS bias voltage.

12. A high-voltage level shifter as in claim 11,

wherein the upper intermediate voltage is greater than the lower intermediate voltage.

13. A high-voltage level shifter as in claim 7,

wherein the upper NMOS bias voltage is greater than the upper PMOS bias voltage, and the lower NMOS bias voltage is greater than the lower PMOS bias voltage.

14. A high-voltage level shifter as in claim 13,

wherein the upper NMOS bias voltage is greater than the upper PMOS bias voltage by an N-type transistor threshold voltage plus a P-type transistor threshold voltage, and wherein the lower NMOS bias voltage is greater than the lower PMOS bias voltage by the N-type transistor threshold voltage plus the P-type transistor threshold voltage.

15. A high-voltage level shifter as in claim 14,

wherein the upper NMOS bias voltage is greater than the lower NMOS bias voltage, and wherein the upper PMOS bias voltage is greater than the lower PMOS bias voltage.

16. A high-voltage level shifter, comprising:

an NMOS non-inverted input transistor having a source, drain, and gate;

an NMOS inverted input transistor having a source, drain, and gate;

a plurality of complementary NMOS/PMOS series intermediate transistor pairs connected in series, such that the plurality has an NMOS non-inverted intermediate source, an NMOS inverted intermediate source, a PMOS non-inverted intermediate source, a PMOS inverted intermediate source, wherein each said complementary NMOS/PMOS series intermediate transistor pair in the plurality has a non-inverted NMOS gate, a non-inverted PMOS gate, an inverted NMOS gate, and an inverted PMOS gate;

wherein the NMOS non-inverted input transistor drain is coupled to the NMOS non-inverted intermediate source;

wherein the NMOS inverted input transistor drain is coupled to the NMOS inverted intermediate source;

wherein the non-inverted NMOS gate and the inverted NMOS gate in each said complementary NMOS/PMOS series intermediate transistor pair are coupled to a corresponding NMOS bias voltage;

wherein the non-inverted PMOS gate and the inverted PMOS gate in each said complementary NMOS/PMOS series intermediate transistor pair are coupled to a corresponding PMOS bias voltage;

wherein each said complementary NMOS/PMOS series intermediate transistor pair having a higher-voltage vertically adjacent NMOS/PMOS series intermediate transistor pair includes a P-body which is connected to an upwardly vertically adjacent NMOS bias voltage.

17. A high-voltage level shifter as in claim 16,

wherein each said complementary NMOS/PMOS series intermediate transistor pair having a lower-voltage vertically adjacent NMOS/PMOS series intermediate transistor pair includes an N-body which is connected to a downwardly vertically adjacent PMOS bias voltage.