Method of making a barrier metal technology for tungsten plug interconnection

  • US 5,827,777 A
  • Filed: 09/24/1996
  • Issued: 10/27/1998
  • Est. Priority Date: 01/24/1995
  • Status: Expired due to Term
First Claim
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1. A method of forming a titanium nitride barrier layer in an integrated circuit device, comprising:

  • providing a first metal conducting layer having a top surface;

    depositing a titanium layer on said first metal conducting layer, said titanium layer having a top surface;

    forming a relatively thin titanium nitride layer in a range of 20 to 50 Angstroms thick on said titanium layer; and

    providing a second metal conducting layer over said titanium nitride layer.

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