Semiconductor device in which an anti-reflective layer is formed by varying the composition thereof
First Claim
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1. A semiconductor device comprising:
- a semiconductor substrate; and
an anti-reflective layer on said substrate said anti-reflective layer being a single layer of a material having a composition with one of its constituent elements varied in quantity along the thickness of the layer over the semiconductor substrate, the anti-reflective layer being selected from the group consisting of SiOx, SiNx and Six Oy Nz.
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Abstract
A semiconductor device in which dry etching properties are rendered compatible with satisfactory anti-reflection characteristics in far-infrared lithography the semiconductor device has a semiconductor substrate and an electrode and wire pattern on the substrate. The semiconductor device also has an anti-reflective layer on the substrate which presents a variation in the composition of a constituent element along the film thickness over the semiconductor substrate. The anti-reflective layer is selected from the group consisting of SiOx, SiNx and Six Oy Nz.
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9 Claims
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1. A semiconductor device comprising:
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a semiconductor substrate; and an anti-reflective layer on said substrate said anti-reflective layer being a single layer of a material having a composition with one of its constituent elements varied in quantity along the thickness of the layer over the semiconductor substrate, the anti-reflective layer being selected from the group consisting of SiOx, SiNx and Six Oy Nz. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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Specification