Nonvolatile reprogrammable interconnect cell with FN tunneling in sense

  • US 5,838,040 A
  • Filed: 03/31/1997
  • Issued: 11/17/1998
  • Est. Priority Date: 03/31/1997
  • Status: Expired due to Term
First Claim
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1. A programmable interconnect for selectively connecting circuit nodes in an integrated circuit comprisinga first field effect transistor having first and second source/drains connected to a first and a second circuit node, a floating gate for storing charge, and a control gate for turning said first field effect transistor on and off responsive to charge on the floating gate,a second field effect transistor having first and second source/drains, a floating gate separated from at least one source/drain by tunneling dioxide, and a control gate capacitively coupled to the floating gate, the floating gate of the first and second field effect transistors being interconnected, anda first conductive line and a second conductive line connected to the first and second source/drains of the second field effect transistor, whereby programming of the interconnect is effected by applying voltages to the first and second conductive lines and to the control gate of the second field effect transistor, and the sensing of conducting and non-conducting states of a node is by selectively monitoring conduction of the second field effect transistor through the first conductive line and the second conductive line.

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