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Chip carrier to allow electron beam probing and FIB modifications

  • US 5,838,159 A
  • Filed: 03/22/1996
  • Issued: 11/17/1998
  • Est. Priority Date: 03/22/1996
  • Status: Expired due to Fees
First Claim
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1. A method for probing an active region of a die including one or more peripheral input/output bump pads located about the periphery of the active region of said die, the method comprising the steps of:

  • supporting said die in a die carrier such that said peripheral bump pads are electrically connected to an external test circuit; and

    accessing the active region with a probe beam directed onto the active region of the die through a probe access region,wherein the die carrier includes(a) a membrane having (i) said probe access region for allowing the probe beam to access substantially all of the die'"'"'s active region, (ii) a plurality of peripheral bump contacts adjacent to the probe access region and arranged to make electrical contact with said peripheral bump pads of the die, and (iii) a plurality of socket contacts electrically connected to said peripheral bump contacts; and

    (b) a membrane carrier supporting said membrane and having an opening corresponding, at least in part, to the location of said probe access region of the membrane.

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