Active pixel sensor integrated with a photocapacitor

• US 5,841,159 A
• Filed: 12/20/1996
• Issued: 11/24/1998
• Est. Priority Date: 04/13/1995
• Status: Expired due to Term

• Current Assignee: Omnivision Technologies Incorporated (Will Semiconductor Co., Ltd. Shanghai)
• Original Assignee: Eastman Kodak Company
• Inventors: Guidash, Robert M., Lee, Paul P., Lee, Teh-Hsuang, Stevens, Eric Gordon
• Primary Examiner(s): Ngo , Ngan V.
• Application Number:
  US08/770,414
• Time in Patent Office: 704 Days
• Field of Search: 257/291, 257/379, 257/448
• US Class Current: 257/291
• CPC Class Codes: H01L 27/14609 Pixel-elements with integrated switching, control, storage or amplification elements scanning details of imagers (circuitry of solid-state image sensors H04N25/00); circuitry of imagers H04N25/70
• CPC Class Codes: H01L 27/14643 Photodiode arrays; MOS imagers
• CPC Class Codes: H01L 27/14645 Colour imagers
• CPC Class Codes: H01L 27/14689 MOS based technologies
• CPC Class Codes: H01L 27/14831 Area CCD imagers

Abstract

The optimization of two technologies (CMOS and CCD) wherein a pinned photodiode is integrated into the image sensing element of an active pixel sensor. Pinned photodiodes are fabricated with CCD process steps into the active pixel architecture. Charge integrated within the active pixel pinned photodiode is transferred into the charge sensing node by a transfer gate. The floating diffusion is coupled CMOS circuitry that can provide the addressing capabilities of individual pixels. Alternatively, a buried channel photocapacitor can be used in place of the pinned photodiode.

Claims

1. An active pixel image sensor comprising:

a plurality of active pixels with at least one of the active pixels having as a light sensing means, at least one buried channel photocapacitor operatively coupled to CMOS control circuitry.

2. The invention of claim 1 further comprising an indium tin oxide electrode over the buried channel photocapacitors operatively coupled to CMOS control circuitry.

3. The invention of claim 2 wherein each of the buried channel photocapacitors is separately addressable by the CMOS control circuitry.

4. The invention of claim 1 wherein the buried channel photocapacitor is formed with a gate electrode that is substantially transparent.

5. The invention of claim 4 wherein each of the buried channel photocapacitors are biased in a state of surface accumulation to reduce dark current generation.

6. The invention of claim 1 wherein the photocapacitor is operatively coupled to a CMOS control circuit through a buried channel transfer gate.

7. The invention of claim 1 wherein a reset gate is operatively coupled to a charge sensing node and the photocapacitor.

8. The invention of claim 1 further comprising amplification means for applying charge from the photocapacitor to the CMOS control circuitry in a predetermined manner.

9. The invention of claim 1 further comprising a plurality of photocapacitor elements formed into an array.

10. The invention of claim 1 further comprising the photocapacitor being operatively coupled to at least one NMOS control circuit.

11. The invention of claim 1 further comprising providing the photocapacitor being operatively coupled to at least one PMOS control circuit.

12. An active pixel image sensor comprising:

a plurality of active pixels with at least one of the active pixels having as a photodetecting element, at least one surface channel photocapacitor having a functionally transparent gate operatively coupled to CMOS control circuitry.

13. The active pixel sensor of claim 12 wherein the gate is an indium tin oxide electrode.