Integrated semiconductor circuit with capacitors of precisely defined capacitance and process for producing the circuit

• US 5,844,302 A
• Filed: 04/28/1997
• Issued: 12/01/1998
• Est. Priority Date: 12/22/1993
• Status: Expired due to Term

• Current Assignee: Electronics and Telecommunications Research Institute, Infineon Technologies AG
• Original Assignee: Siemens AG
• Inventors: Hain, Manfred, Fischer, Elisabeth
• Primary Examiner(s): OSTROWSKI, DAVID M
• Application Number:
  US08/847,867
• Time in Patent Office: 582 Days
• Field of Search: 257/506, 257/508, 257/532
• US Class Current: 257/532
• CPC Class Codes: H01L 27/0805 Capacitors only
• CPC Class Codes: H01L 28/40 Capacitors

Abstract

An integrated semiconductor circuit, such as an A/D converter, includes a first zone having capacitors disposed therein. The capacitors have capacitor plates being formed of a first conductive layer and a second conductive layer. A second zone has circuit elements disposed therein. A planarizing layer and a cover layer insulate the first and second conductive layers from one another in the second zone, except for a possible peripheral region. A dielectric is formed only of the cover layer between the capacitor plates in the first zone, except for a possible peripheral region. A process for producing an integrated semiconductor circuit includes producing the first conductive layer; applying an insulating planarizing layer after producing the first conductive layer; removing the planarizing layer in the first zone until a surface of the first conductive layer is exposed, except for a possible peripheral region; applying an insulating cover layer over the entire surface; and producing the second conductive layer.

Claims

1. An integrated semiconductor circuit, comprising;

a first conductive layer;

a second conductive layer disposed on said first conductive layer;

said first conductive layer and said second conductive layer defining a first zone and a second zone;

said first zone having a capacitor disposed therein, said capacitor having capacitor electrodes being formed of said first conductive layer and said second conductive layer;

said second zone having circuit elements disposed therein;

a planarizing layer disposed between said first conductive layer and said second conductive layer in said second zone and a cover layer directly covering said planarizing layer, said planarizing layer and said cover layer insulating said first conductive layer and said second conductive layer from one another in said second zone; and

a dielectric being formed only of said cover layer between said capacitor electrodes in said first zone.

2. The integrated semiconductor circuit according to claim 1, wherein said planarizing layer and said cover layer insulate said first and second conductive layers from one another in said second zone, except for a peripheral region;

and said dielectric is formed only of said cover layer between said capacitor plates in said first zone, except for a peripheral region.

3. The integrated semiconductor circuit according to claim 1, wherein said cover layer is formed of silicon oxide.

4. The integrated semiconductor circuit according to claim 1, wherein said conductive layers are formed of polysilicon, and said planarizing layer is formed of silicon oxide.

5. The integrated semiconductor circuit according to claim 1, wherein said first conductive layer is formed of polysilicon, said second conductive layer is formed of a material selected from the group consisting of metal and a metal alloy, and said planarizing layer is formed of a doped silicate glass.

6. The integrated semiconductor circuit according to claim 1, wherein said conductive layers are formed of a material selected from the group consisting of metal and a metal alloy, and said planarizing layer is formed of silicon oxide and a further layer.

7. The integrated semiconductor circuit according to claim 1, wherein said capacitors have a capacitance being adjusted by the thickness of said cover layer.

8. An A/D converter, comprising:

a first conductive layer;

a second conductive layer disposed on said first conductive layer;

said first conductive layer and said second conductive layer defining a first zone and a second zone;

said first zone having a capacitor disposed therein, said capacitor having capacitor electrodes being formed of said first conductive layer and said second conductive layer;

said second zone having circuit elements disposed therein;

a planarizing layer disposed between said first conductive layer and said second conductive layer in said second zone and a cover layer directly covering said planarizing layer, said planarizing layer and said cover layer insulating said first conductive layer and said second conductive layer from one another in said second zone; and

a dielectric being formed only of said cover layer between said capacitor electrodes in said first zone.